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Alternating phase shift mask design conflict resolution

  • US 6,523,165 B2
  • Filed: 07/13/2001
  • Issued: 02/18/2003
  • Est. Priority Date: 07/13/2001
  • Status: Active Grant
First Claim
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1. A method for producing phase shifting layout data from a portion of an integrated circuit (IC) layout of a layer of material, the method comprising:

  • identifying a feature in the IC layout for definition with a phase shifting layout using a computer;

    generating using a computer the phase shifting layout data using the IC layout, the phase shifting layout data defining phase shifting areas in an opaque field for defining the feature in the material, the phase shifting layout data adapted to be used in conjunction with a second layout data, the second layout data defining other structures in the material, and preventing exposure of the feature, the second layout data corresponding to a trim mask for use in conjunction with a phase shifting mask corresponding to the phase shifting layout data;

    determining using a computer if the phase shifting layout data will result in a conflict with other structure in the material; and

    modifying the phase shifting layout data to resolve the conflict by adjusting the phase shifting layout to optically correct for the conflict with other structure in the material using a computer.

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