Alternating phase shift mask design conflict resolution
First Claim
1. A method for producing phase shifting layout data from a portion of an integrated circuit (IC) layout of a layer of material, the method comprising:
- identifying a feature in the IC layout for definition with a phase shifting layout using a computer;
generating using a computer the phase shifting layout data using the IC layout, the phase shifting layout data defining phase shifting areas in an opaque field for defining the feature in the material, the phase shifting layout data adapted to be used in conjunction with a second layout data, the second layout data defining other structures in the material, and preventing exposure of the feature, the second layout data corresponding to a trim mask for use in conjunction with a phase shifting mask corresponding to the phase shifting layout data;
determining using a computer if the phase shifting layout data will result in a conflict with other structure in the material; and
modifying the phase shifting layout data to resolve the conflict by adjusting the phase shifting layout to optically correct for the conflict with other structure in the material using a computer.
3 Assignments
0 Petitions
Accused Products
Abstract
Methods and apparatuses for preparing layouts and masks that use phase shifting to enable production of subwavelength features on an integrated circuit in close (optical) proximity to other structures are described. One embodiment selects from several strategies for resolving conflicts between phase shifters used to define features and (optically) proximate structures that are being defined other than by phase shifting. One embodiment adds additional phase shifters to define the conflicting structures. Another embodiment optically corrects the shape of the phase shifters in proximity to a conflicting structure. Resulting integrated circuits can include a greater number of subwavelength features even in areas that are in close proximity to structures that were not initially identified for production using a phase shifting mask.
-
Citations
26 Claims
-
1. A method for producing phase shifting layout data from a portion of an integrated circuit (IC) layout of a layer of material, the method comprising:
-
identifying a feature in the IC layout for definition with a phase shifting layout using a computer;
generating using a computer the phase shifting layout data using the IC layout, the phase shifting layout data defining phase shifting areas in an opaque field for defining the feature in the material, the phase shifting layout data adapted to be used in conjunction with a second layout data, the second layout data defining other structures in the material, and preventing exposure of the feature, the second layout data corresponding to a trim mask for use in conjunction with a phase shifting mask corresponding to the phase shifting layout data;
determining using a computer if the phase shifting layout data will result in a conflict with other structure in the material; and
modifying the phase shifting layout data to resolve the conflict by adjusting the phase shifting layout to optically correct for the conflict with other structure in the material using a computer. - View Dependent Claims (2, 3, 4, 5)
-
-
6. An electromagnetic waveform embodied on a carrier wave, the electromagnetic waveform comprising a computer program for modifying a phase shifting layout data for a portion of an integrated circuit (IC) layout of a layer of material to resolve a conflict between placement of phase shifting areas and structures to be produced other than by phase shifting areas, the phase shifting layout data defining at least a first phase shifting area, the IC layout defining at least a first structure, the computer program further comprising:
-
a first set of instructions for determining whether there is a conflict between the at least a first phase shifting area and the at least a first structure in the IC layout, the conflict corresponding to whether production of the layer of material using a mask defined by the phase shifting layout would result in exposure of a portion of the at least a first structure, wherein the determining includes simulating optical proximity characteristics of a manufacturing process;
a second set of instructions for further defining the phase shifting layout to include at least a second phase shifting area response to the determining, the at least a second phase shifting area to assist in production of the structure in the layer of material using the phase shifting layout. - View Dependent Claims (7, 8, 9, 10, 11)
-
-
12. An apparatus for producing phase shifting layout data from a portion of an integrated circuit (IC) layout of a layer of material, the apparatus comprising:
-
means for identifying a feature in the IC layout for definition with a phase shifting layout;
means for generating the phase shifting layout data using the IC layout, the phase shifting layout data defining phase shifting areas in an opaque field for defining the feature in the material, the phase shifting layout data adapted to be used in conjunction with a second layout data, the second layout data defining other structures in the material, and preventing exposure of the feature, the second layout data corresponding to a trim mask for use in conjunction with a phase shifting mask corresponding to the phase shifting layout data;
means for determining if the phase shifting layout data will result in a conflict with other structure in the material; and
means for modifying the phase shifting layout data to resolve the conflict by adjusting the phase shifting layout to optically correct for the conflict with other structure in the material. - View Dependent Claims (13, 14, 15, 16)
-
-
17. A mask with a plurality of phase shifting areas for use in defining a portion of an IC layout of a layer of material, another portion of the IC layout being defined by a trim mask, the phase shifting areas being defined by the following process:
-
determining if a first phase shifting area in the plurality of phase shifting areas result in a conflict with structure in the material due to optical proximity effects; and
modifying the first phase shifting area to optically correct for the conflict with structure in the material using a computer. - View Dependent Claims (18, 19)
-
-
20. A system for defining phase shifting layout data from a portion of an integrated circuit (IC) layout of a layer of material, the system comprising:
-
a memory, the memory comprising a layout data for a portion of an IC layout of a layer of material, a phase shifting layout data, a first computer program for defining the phase shifting layout data including phase shifting areas in an opaque field to define features in the material, a second computer program for identifying if the phase shifting layout data will result in a conflict with other structure in the material, a third computer program for resolving conflicts between phase shifting layout data and other structure in the material, and a fourth computer program for coordinating operation of the first computer program, the second computer program, and the third computer program on the layout data;
a processor for executing the first computer program, the second computer program, the third computer program, and the fourth computer program. - View Dependent Claims (21, 22, 23, 24, 25, 26)
-
Specification