Method and apparatus for marking a bare semiconductor die
First Claim
1. A method of marking a semiconductor die comprising:
- reducing a cross-section of said semiconductor die;
applying a tape having optical energy-markable properties to at least a portion of a surface of said semiconductor die;
exposing at least a portion of said tape applied to said semiconductor die to optical energy; and
forming a mark in at least a portion of the tape using said optical energy.
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0 Petitions
Accused Products
Abstract
The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including backgrinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multi-level laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogeneous surface for marking subsequent to exposure to electro-magnetic radiation.
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Citations
74 Claims
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1. A method of marking a semiconductor die comprising:
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reducing a cross-section of said semiconductor die;
applying a tape having optical energy-markable properties to at least a portion of a surface of said semiconductor die;
exposing at least a portion of said tape applied to said semiconductor die to optical energy; and
forming a mark in at least a portion of the tape using said optical energy.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of manufacturing an integrated circuit semiconductor die comprising:
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providing a semiconductor wafer comprising integrated circuitry on a first surface thereof;
reducing at least a portion of a cross-section of said semiconductor wafer;
applying a tape having optical energy-markable properties to at least a portion of a second surface of said semiconductor wafer;
exposing at least a portion of said tape applied to said semiconductor wafer to optical energy; and
forming a mark in at least a portion of said tape by said exposing step. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
dicing said semiconductor wafer to create a plurality of individual integrated circuit semiconductor dice with said at least a portion of said tape thereon prior to said exposing said at least a portion of said tape to optical energy.
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26. The method of claim 25, further comprising applying a carrier tape over said tape prior to said dicing of said semiconductor wafer.
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27. The method of claim 24, wherein said reducing said at least a portion of a cross-section of said semiconductor wafer includes a backgrinding process.
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28. The method of claim 27, wherein said step of applying a tape to at least a portion of a second surface of said semiconductor wafer includes applying said tape to a surface of said semiconductor wafer subjected to said backgrinding process.
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29. The method of claim 24, wherein said step of applying a tape to at least a portion of a second surface of said semiconductor wafer includes applying said tape to an edge portion of said semiconductor wafer.
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30. The method of claim 29, wherein said exposing at least a portion of said tape to form a mark comprises exposing said tape on said edge portion of said semiconductor wafer.
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31. The method of claim 24, wherein said optical-energy markable properties of said tape are embedded within said tape.
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32. The method of claim 24, wherein said optical-energy markable properties of said tape include properties of at least one adhesive layer affixed to said tape.
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33. The method of claim 32, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, and combinations of any thereof.
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34. The method of claim 32, wherein said at least one adhesive layer is UV-sensitive.
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35. The method of claim 32, wherein said at least one adhesive layer includes a multi-layer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between said tape and said first outermost layer.
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36. The method of claim 24, further comprising:
- applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
- applying a second tape over at least a portion of a surface of said tape; and
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37. The method of claim 36, wherein said second tape is a carrier tape.
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38. The method of claim 37 wherein said carrier tape includes translucent properties.
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39. The method of claim 36, wherein said second tape comprises a tape having optical energy-markable properties.
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40. The method of claim 24, wherein said tape comprises polytetrafluoroethylene tape.
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41. The method of claim 24, wherein said exposing at least a portion of said tape to said optical energy includes exposing said at least a portion of said tape to one of a Nd:
- YAG (yttrium aluminum garnet) laser, Nd;
YLP (pulsed ytterbium fiber) laser, or a carbon dioxide laser.
- YAG (yttrium aluminum garnet) laser, Nd;
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42. The method of claim 24, wherein said exposing at least a portion of said tape to said optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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43. The method of claim 42, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.
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44. The method of claim 24, wherein said tape includes a tape having antistatic capacities.
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45. The method of claim 24, wherein said tape includes a tape of a thermally dissipating material.
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46. The method of claim 25, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said plurality of individual integrated circuit semiconductor dice.
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47. The method of claim 24, wherein forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.
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48. A method of identifying a known good die comprising:
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providing a semiconductor wafer comprising integrated circuitry on a first surface thereof;
reducing at least a portion of a cross-section of said semiconductor wafer;
testing at least one integrated circuit of said semiconductor wafer for defects;
compiling data representing defect testing results;
applying a tape having optical energy-markable properties to at least a portion of a second surface of said semiconductor wafer;
exposing at least a portion of said tape applied to said semiconductor wafer to optical energy;
forming at least one mark in at least a portion of said tape on at least a portion of said semiconductor wafer; and
encoding said defect testing results onto portions of said wafer using said at least one mark. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74)
dicing said semiconductor wafer to create a plurality of individual integrated circuit semiconductor dice after said applying said tape.
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50. The method of claim 49, wherein said encoding said defect testing results includes encoding said defect testing results on at least a portion of said plurality of individual integrated circuit semiconductor dice.
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51. The method of claim 49, further comprising:
applying a carrier tape over said tape prior to said dicing of said semiconductor wafer.
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52. The method of claim 48, wherein said reducing said at least a portion of said cross-section of said semiconductor wafer includes a backgrinding process.
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53. The method of claim 52, wherein said step of applying a tape to at least a portion of a second surface of said semiconductor wafer includes applying said tape to a surface of said semiconductor wafer subjected to said backgrinding process.
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54. The method of claim 48, wherein said step of applying a tape to at least a portion of a second surface of said semiconductor wafer includes applying said tape to an edge portion of said semiconductor wafer.
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55. The method of claim 54, wherein said exposing at least a portion of said tape to optical energy comprises exposing said tape on said edge portion of said semiconductor wafer.
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56. The method of claim 48, wherein said optical-energy markable properties of said tape are embedded within said tape.
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57. The method of claim 48, wherein said optical-energy markable properties of said tape include properties of at least one adhesive layer affixed to said tape.
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58. The method of claim 57, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, and combinations of any thereof.
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59. The method of claim 57, wherein said at least one adhesive layer is UV-sensitive.
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60. The method of claim 57, wherein said at least one adhesive layer includes:
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a multi-layer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components; and
a second layer disposed between said tape and said first outermost layer.
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61. The method of claim 48, further comprising:
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applying a second tape over at least a portion of a surface of said tape; and
exposing at least a portion of said second tape.
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62. The method of claim 61, wherein said second tape is a carrier tape.
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63. The method of claim 62, wherein said carrier tape includes a tape having translucent properties.
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64. The method of claim 61, wherein said second tape includes a tape having optical energy-markable properties.
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65. The method of claim 48, wherein said tape comprises polytetrafluoroethylene tape.
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66. The method of claim 48, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to one of a Nd:
- YAG laser (yttrium aluminum garnet), Nd;
YLP laser (pulsed ytterbium fiber), or a carbon dioxide laser.
- YAG laser (yttrium aluminum garnet), Nd;
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67. The method of claim 48, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.
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68. The method of claim 67, wherein said tape comprises a UV-penetrable polyvinyl chloride tape having an acrylic UV-sensitive adhesive disposed thereon.
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69. The method of claim 48, wherein said tape includes a tape having antistatic capacities.
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70. The method of claim 48, wherein said tape includes a tape of thermally dissipating material.
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71. The method of claim 49, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said plurality of individual integrated circuit semiconductor dice.
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72. The method of claim 48, wherein forming said mark includes one of heating, chemically reacting, or transferring of materials comprising said tape.
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73. The method of claim 48, wherein said testing said at least one integrated circuit of said semiconductor wafer for defects includes electrical testing of said semiconductor wafer.
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74. The method of claim 48, wherein said testing said at least one integrated circuit of said semiconductor wafer for defects includes visually scanning said semiconductor wafer for defects.
Specification