Method for fabricating an organic electroluminescene device having organic field effect transistor and organic eloectroluminescence diode

• US 6,524,884 B1
• Filed: 05/16/2002
• Issued: 02/25/2003
• Est. Priority Date: 08/22/2001
• Status: Expired due to Term

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Oh, Ji-young, Kim, Seong-hyun, Lee, Jeong-ik, Yang, Yong-suk, Chu, Hye-yong, Do, Lee-mi, Zyung, Tae-hyoung, Lee, Hyo-young
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Roman, Angel
• Application Number:
  US10/150,368
• Publication Number:
  US 20030040137A1
• Time in Patent Office: 285 Days
• Field of Search: 438/99, 438/21, 438/29, 438/608, 438/609, 257/40, 257/114, 257/292, 257/99, 257/79, 257/103
• US Class Current: 438/99
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 50/805 Electrodes
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]
• CPC Class Codes: H10K 59/805 Electrodes

Abstract

Provided is an organic electroluminescent (EL) device including a substrate, a transparent electrode formed on the substrate, an organic light-emitting layer formed on the transparent electrode, a metal electrode formed on the organic light-emitting layer, a first insulating layer formed on the metal electrode, a gate electrode formed on the first insulating layer, a second insulating layer formed on the gate electrode, an organic semiconducting layer formed on the second insulating layer, a source electrode connected to one end of the organic semiconducting layer on the second insulating layer and connected to the metal electrode, and a drain electrode connected to the other end of the organic semiconducting layer on the second insulating layer.

Claims

1. A method for fabricating an organic EL device comprising the steps of:

sequentially forming a transparent electrode, an organic light-emitting layer and a metal electrode over a substrate to form an organic LED;

forming a first insulating layer on the metal electrode;

forming a gate electrode patterned on a portion of the surface of the first insulating layer;

forming a second insulating layer on the first insulating layer and the gate electrode;

sequentially patterning the second insulating layer and the first insulating layer to form a via hole partially exposing the surface of the metal electrode;

forming a metal electrode layer filling the via hole and covering the second insulating layer;

patterning the metal electrode layer to partially expose the surface of the second insulating layer, and forming a source electrode contacting the metal electrode and a drain on the second insulating layer; and

forming an organic semiconducting layer on the second insulating layer between the source electrode and the drain electrode.

2. The method according to claim 1, wherein the organic light-emitting layer is formed of an organic monomolecular material or an organic polymeric material.

3. The method according to claim 2, wherein the organic light-emitting layer is formed by thermal evaporation, spin coating, pulsed laser deposition, cluster ion beam deposition or sputtering.

4. The method according to claim 1, wherein the metal electrode is formed by thermal evaporation, spin coating, pulsed laser deposition, cluster ion beam deposition or sputtering.

5. A method for fabricating an organic EL device comprising the steps of:

providing a metal substrate having a first, bottom surface and a second, top surface;

sequentially forming an organic light-emitting layer and a transparent electrode on the first surface of the metal substrate;

forming a first insulating layer on the second surface of the metal substrate;

forming a gate electrode patterned on a portion of the surface of the first insulating layer;

forming a second insulating layer on the first insulating layer and the gate electrode;

sequentially patterning the second insulating layer and the first insulating layer to form a via hole partially exposing the surface of the metal substrate;

forming a metal electrode layer filling the via hole and covering the second insulating layer;

patterning the metal electrode layer to partially expose the surface of the second insulating layer, and forming a source electrode contacting the metal electrode and a drain on the second insulating layer; and

forming an organic semiconducting layer on the second insulating layer between the source electrode and the drain electrode.

6. The method according to claim 5, wherein in step of providing the metal substrate, aluminum or stainless steel coated with one selected from the group consisting of Al, Ca, Sr, Y, Yb, Li and Mg, is used.

7. A method for fabricating an organic EL device comprising the steps of:

providing an insulating layer having a first, bottom surface and a second, top surface;

sequentially forming a metal electrode, an organic light-emitting layer and a transparent electrode on the first surface of the insulating substrate;

forming a gate electrode patterned on a portion of the surface of the insulating layer so as not to cover the via hole;

forming an insulating layer on the insulating substrate and the gate electrode;

patterning the second insulating layer to expose the via hole of the insulating substrate;

forming a metal electrode layer contacting the via hole and covering the insulating layer;

patterning the metal electrode layer to partially expose the surface of the insulating layer, and forming a source electrode contacting the metal electrode and a drain on the second insulating layer; and

forming an organic semiconducting layer on the insulating layer between the source electrode and the drain electrode.

8. The method according to claim 7, wherein in the step of providing the insulating layer, a glass or plastic substrate having a via hole is used.