Planarization of metal container structures
First Claim
1. A method of providing a conductive material in an opening, comprising:
- forming said conductive material in said opening and over at least a portion of an insulative material outside of said opening;
forming a metal-containing fill material over at least a portion of said conductive material such that at least some of said metal-containing fill material is located in said opening;
removing at least a portion of said conductive material which is over said insulative material outside of said opening; and
removing substantially all of said metal-containing fill material from said opening.
1 Assignment
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Accused Products
Abstract
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.
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Citations
74 Claims
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1. A method of providing a conductive material in an opening, comprising:
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forming said conductive material in said opening and over at least a portion of an insulative material outside of said opening;
forming a metal-containing fill material over at least a portion of said conductive material such that at least some of said metal-containing fill material is located in said opening;
removing at least a portion of said conductive material which is over said insulative material outside of said opening; and
removing substantially all of said metal-containing fill material from said opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 34, 74)
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21. A method of forming a bottom electrode of a capacitor, comprising:
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locating a second conductive material with in opening and in contact with a first conductive material and over at least a portion of an insulative material outside of said opening;
providing a metal-containing fill material over at least a portion of said conductive material which is inside said opening and which is over said insulative material outside of said opening removing substantially all of said metal-containing fill material from inside said opening. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 35, 36, 37, 41, 42, 43, 44)
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38. A method of providing a conductive material in an opening provided in an insulative material over a substrate, wherein said opening is in contact with a surface portion of said substrate, comprising:
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depositing a conductive material over at least a part of the inside of said opening and over at least a portion of the surface of said insulative material outside of said opening;
depositing a tungsten-containing fill material over at least a portion of said conductive material which is over said surface portion of said substrate and which is over said insulative material outside of said opening, wherein said tungsten-containing fill material at least partially fills said opening and supports said conductive material;
removing at least a portion of said tungsten containing fill material and said conductive material which is over said insulative material outside of said opening, said removal being effected by planarization; and
removing substantially all of said tungsten-containing fill material from said opening. - View Dependent Claims (39, 40, 45, 46, 47, 48, 49, 50)
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51. A method of forming a bottom electrode of a capacitor and a bit line conductive plug in a semiconductive device, comprising:
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providing a first opening through the surface of an insulative material provided over a substrate in said device, wherein at least a portion of said opening contacts a first conductive material;
providing a second conductive material over at least a portion of the surface of said opening in contact with said first conductive material and over at least a portion of the surface of said insulative material outside of said opening;
providing a protective layer over said second conductive material;
providing a second opening through said protective layer, and through said second conductive material which is over said insulative material as well as through said insulative material, wherein at least a portion of said second opening contacts a third conductive material;
removing said protective layer;
providing a metal-containing fill material over said second conductive material which is inside said first opening and which is over said insulative material outside of said opening, wherein said metal-containing fill material is further provided over said second opening such that said metal-containing fill material at least partially fills said openings so as to form a bit line conductive plug in said second opening;
removing at least a portion of said metal-containing fill material and said conductive material which is over said insulative material outside of said openings; and
removing at least a portion of said metal-containing fill material from said first opening so as to form said bottom electrode of said capacitor. - View Dependent Claims (52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
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68. A method of planarizing a conductive material formed over an opening without substantially deforming said material, comprising:
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contacting said conductive material with a metal-containing fill material such that said fill material is over said conductive material and at least partially fills said opening; and
planarizing said conductive material and said metal-containing fill material wherein a top portion of said conductive material and said fill material are substantially co-planar and a top portion of said opening removing substantially all of said fill material from said opening after said planarization. - View Dependent Claims (69, 70, 71, 72, 73)
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Specification