Method of forming in-situ electroplated oxide passivating film for corrosion inhibition

• US 6,524,957 B2
• Filed: 09/17/2001
• Issued: 02/25/2003
• Est. Priority Date: 08/30/1999
• Status: Expired due to Fees

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: Agere Systems Incorporated (Broadcom, Inc.)
• Inventors: Misra, Sudhanshu, Merchant, Sailesh Mansinh, Roy, Pradip Kumar
• Primary Examiner(s): Chaudhari, Chandra
• Assistant Examiner(s): NGUYEN, THANH T
• Application Number:
  US09/953,706
• Publication Number:
  US 20020030282A1
• Time in Patent Office: 526 Days
• Field of Search: 438/687, 438/618, 438/626, 438/629, 438/633, 438/635, 438/637-640, 438/668, 438/672-675
• US Class Current: 438/687
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76888 By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.

Claims

1. A method of forming a semiconductor providing the steps of:

providing a substrate having a metallic conductor;

depositing a dielectric layer onto the substrate;

forming a via through the dielectric layer and exposing the metallic conductor;

depositing copper having an oxide layer formed in situ into the via; and

forming an oxide layer in situ in the copper.

2. The method of claim 1, further comprising the step of depositing an additional amount of copper on the oxide layer.

3. The method of claim 1, further comprising depositing at least one barrier layer into the via between the dielectric and the copper.

4. The method of claim 3, wherein the barrier layer is made from a material selected from the group consisting of tantalum nitride, titanium nitride, titanium tungsten, tantalum, titanium, tantalum silicon nitride, tungsten nitride, and combinations thereof.

5. The method of claim 3, further comprising depositing a copper-containing intermediate layer onto the barrier layer.

6. The method of claim 5, wherein the copper is deposited onto the copper-containing intermediate layer.

7. The method of claim 5, wherein the copper-containing intermediate layer is deposited to a thickness of from about 1000 Å

to about 3000 Å

.

8. The method of claim 1, wherein the step of forming the oxide layer in situ further comprises adding an amount of Na₂S₂O₈ in an acidic medium.

9. The method of claim 1, wherein the copper is deposited by chemical vapor deposition.