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Semiconductor device with junction isolation

  • US 6,525,340 B2
  • Filed: 06/04/2001
  • Issued: 02/25/2003
  • Est. Priority Date: 06/04/2001
  • Status: Expired due to Fees
First Claim
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1. A field effect transistor (FET), comprising:

  • an active semiconductor region defined upon a substrate, said active semiconductor region further having a mesa region formed therein;

    a gate formed within said active semiconductor region, said gate abutting said mesa region along a side thereof;

    one of a source region or a drain region defined within a first area of said semiconductor region, said first area of said semiconductor region being located over an insulating layer and not including said mesa region; and

    the other of a source or a drain region defined within a top surface of said mesa region;

    wherein said insulating layer isolates said one of a source region or a drain region within said first area of said semiconductor region from said substrate.

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