Semiconductor photonic device

• US 6,525,345 B1
• Filed: 08/05/1999
• Issued: 02/25/2003
• Est. Priority Date: 08/17/1998
• Status: Expired due to Fees

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Kadota, Michio
• Primary Examiner(s): Leke, Steven
• Assistant Examiner(s): Kang, Donghee
• Application Number:
  US09/369,656
• Time in Patent Office: 1,300 Days
• Field of Search: 257/13, 257/79, 257/86, 257/85, 257/103, 257/94, 438/22, 438/24, 438/46, 438/47, 438/44, 372/43, 372/1, 372/50
• US Class Current: 257/94
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A semiconductor photonic device includes a Z-cut quartz substrate and a compound semiconductor layer presented by In_xGa_yAl_zN (where x+y+z=1, 0≦x ≦1, 0≦y≦1, and 0≦z≦1) formed on the Z-cut quartz substrate.

Claims

1. A semiconductor photonic device comprising:

a Z-cut quartz substrate; and

a compound semiconductor layer represented by In_xGa_yAl_zN (where x+y+z=1, 0≦

x≦

1, 0≦

y≦

1, and 0≦

z≦

1) formed on the Z-cut quartz substrate.

2. A semiconductor photonic device according to claim 1, wherein the [1000] direction, the [10{overscore (1)}0] direction, and the [11{overscore (2)}0] direction of the In_xGa_yAl_zN layer substantially correspond to the [1000] direction, the [10{overscore (1)}0] direction, and the [11{overscore (2)}0] direction of the quartz substrate, respectively.

3. A semiconductor photonic device comprising:

a Z-cut quartz substrate;

a thin film buffer layer of GaN, ZnO or AlN formed on the Z-cut quartz substrate; and

a compound semiconductor layer represented by In_xGa_yAl_zN (where x+y+z=1, 0≦

x≦

1, 0≦

y≦

1, and 0<

z≦

1), formed on the ZnO thin film or AlN thin film.

4. A semiconductor photonic device according to claim 3, wherein the buffer layer is GaN.

5. A semiconductor photonic device according to claim 3, wherein the buffer layer is ZnO.

6. A semiconductor photonic device according to claim 3, wherein the buffer is AlN.

7. A photonic device comprising:

a Z-cut quartz substrate;

an n-GaN thin film on the Z-cut quartz substrate;

an n-AlGaN layer on the n-GaN thin film;

an InGaN layer on the n-AlGaN layer;

a p-AlGaN layer on the InGaN layer;

a p-GaN layer on the p-AlGaN layer;

a first electrode on the p-GaN layer; and

a second electrode on the n-GaN layer.

8. A photonic device comprising:

a Z-cut quartz substrate;

a ZnO film on the Z-cut quartz substrate;

an n-GaN layer on the ZnO film;

an n-AlGaN layer on the n-GaN layer;

an InGaN layer on the n-AlGaN layer;

a p-AlGaN layer on the InGaN layer;

a p-GaN layer on the p-AlGaN layer;

a first electrode on the p-GaN layer; and

a second electrode on the n-GaN layer.

9. A photonic device comprising:

a Z-cut quartz substrate;

an AlN film on the Z-cut quartz substrate;

an n-GaN layer on the AlN film;

an n-AlGaN layer on the n-GaN layer;

an InGaN layer on the n-GaN layer;

a p-AlGaN layer on the n-AlGaN layer;

a p-GaN layer on the p-AlGaN layer;

a first electrode on the p-GaN layer; and

a second electrode on the n-GaN layer.