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Power semiconductor device having trench gate structure and method for manufacturing the same

  • US 6,525,373 B1
  • Filed: 06/28/1999
  • Issued: 02/25/2003
  • Est. Priority Date: 06/30/1998
  • Status: Expired due to Fees
First Claim
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1. A power semiconductor device of a trench gate structure, comprising:

  • a semiconductor substrate;

    a semiconductor region of a first conductive type formed on the semiconductor substrate;

    a source region of a second conductive type formed on the semiconductor region;

    a gate formed in a trench formed to pass through the source region and the semiconductor region, said gate formed of a first conductive polysilicon layer formed to be insulated from the semiconductor substrate by interposing a gate insulating film, and formed of a second conductive metal layer surrounded by the first conductive polysilicon layer, wherein both the first conductive polysilicon layer and the second conductive metal layer extend to a depth which passes through the source region and the semiconductor region to the semiconductor substrate;

    an interlayer dielectric film formed on the semiconductor substrate;

    a gate electrode connected to the gate through a first contact hole formed in the interlayer dielectric film; and

    a source electrode connected to the source region through a second contact hole formed in the interlayer dielectric film.

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