Collar positionable about a periphery of a contact pad and around a conductive structure secured to the contact pads, semiconductor device components including same, and methods for fabricating same

• US 6,525,408 B2
• Filed: 03/27/2002
• Issued: 02/25/2003
• Est. Priority Date: 06/08/2000
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Akram, Salman, Ahmad, Syed Sajid
• Primary Examiner(s): Booth, Richard
• Assistant Examiner(s): LINDSAY JR, WALTER LEE
• Application Number:
  US10/107,969
• Publication Number:
  US 20020100973A1
• Time in Patent Office: 335 Days
• Field of Search: 257/758, 257/738, 257/773, 257/668, 257/778, 257/779, 257/780, 257/781, 257/688
• US Class Current: 257/668
• CPC Class Codes: B33Y 10/00 Processes of additive manufacturing
• CPC Class Codes: B33Y 80/00 Products made by additive manufacturing
• CPC Class Codes: H01L 21/44 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/06131 being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/0615 Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
• CPC Class Codes: H01L 2224/10126 Bump collar
• CPC Class Codes: H01L 2224/1148 Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
• CPC Class Codes: H01L 2224/1191 Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/1319 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 2224/81136 involving guiding structures, e.g. spacers or supporting members
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/12 Structure, shape, material or disposition of the bump connectors prior to the connecting process
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/742 : Apparatus for manufacturing bump connectors
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H05K 2201/10977 : Encapsulated connections
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y02P 80/30 : Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

Dielectric collars are configured to be positioned laterally around contact pads of a semiconductor device or another substrate. Substrates on which the collars are positioned and that include contact pads that are exposed through the collars are also disclosed, as are methods for fabricating the collars and for positioning the collars on substrates. The collars may be positioned laterally adjacent to the contact pads of a substrate before or after conductive structures are secured to the contact pads. When the conductive structures are electrically connected to contact pads of another semiconductor device component, the collars prevent the material of the conductive structures from contacting regions of the surface of the substrate or other semiconductor device component that surround the contact pads. The collars may be preformed structures that are assembled with the substrate, or they may be formed on the substrate. A stereolithographic method of fabricating the collars is disclosed.

Claims

1. A semiconductor device, comprising:

a substrate having contact pads exposed at a surface thereof; and

at least one collar disposed around at least one contact pad of said contact pads, said at least one collar protruding from said surface so as to laterally contain material of at least a base portion of a conductive structure securable to said at least one contact pad.

2. The semiconductor device of claim 1, wherein said at least one collar comprises a dielectric material.

3. The semiconductor device of claim 1, wherein said at least one collar comprises a photopolymer.

4. The semiconductor device of claim 3, wherein at least a portion of said photopolymer is at least semisolid.

5. The semiconductor device of claim 3, wherein said at least one collar comprises a plurality of superimposed, contiguous, mutually adhered layers.

6. The semiconductor device of claim 1, wherein said substrate comprises a semiconductor wafer including a plurality of semiconductor dice.

7. The semiconductor device of claim 1, wherein said substrate comprises a semiconductor die.

8. The semiconductor device of claim 1, wherein said substrate comprises at least one chip-scale package.

9. The semiconductor device of claim 1, wherein said at least one collar includes an aperture and is configured to contact at least a portion of a surface of a conductive structure securable to said at least one contact pad and located within said aperture.

10. The semiconductor device of claim 9, wherein said aperture is configured to define at least a portion of said conductive structure.

11. The semiconductor device of claim 1, further comprising a conductive structure secured to said at least one contact pad.

12. The semiconductor device of claim 11, wherein said conductive structure is configured as a pillar.

13. The semiconductor device of claim 11, wherein said conductive structure has a mushroom-like configuration.

14. The semiconductor device of claim 11, wherein said conductive structure has a substantially nonball-shaped configuration.

15. The semiconductor device of claim 1, wherein said at least one collar is configured to at least partially align a preformed conductive structure with said at least one contact pad.

16. A semiconductor device, comprising:

at least one contact; and

;

a structure laterally surrounding at least a portion of said at least one contact, said structure including;

a plurality of at least partially superimposed, mutually adhered, contiguous material layers; and

a receptacle extending through each of said plurality of at least partially superimposed, mutually adhered, contiguous material layers, said receptacle configured to receive at least a portion of a discrete conductive structure.

17. The semiconductor device of claim 16, wherein said structure is configured to prevent the discrete conductive structure from extending laterally beyond an outer periphery of said plurality of at least partially superimposed, mutually adhered, contiguous material layers.

18. The semiconductor device of claim 16, wherein a surface of said receptacle is configured to contact at least the portion of the discrete conductive structure.

19. The semiconductor device of claim 18, wherein said surface is configured to form a shape of at least the portion of the discrete conductive structure.

20. The semiconductor device of claim 16, wherein each of said plurality of at least partially superimposed, mutually adhered, contiguous material layers comprises photopolymer.

21. The semiconductor device of claim 16, wherein said structure is configured to facilitate alignment of the discrete conductive structure with at least said portion of said at least one contact.