Wafer-level burn-in and test
First Claim
1. A method comprising:
- providing a semiconductor wafer comprising unsingulated dice, each of said die comprising a plurality of pads;
permanently attaching a plurality of resilient conductive contact elements to said pads;
providing a test substrate comprising;
a plurality of wafer contacts, and active electronics;
bringing ones of said wafer contacts into electrical contact with ones of said resilient, conductive contact elements;
receiving at said test substrate test data from a semiconductor tester;
said active electronics processing said test data; and
exercising at least a portion of said wafer in accordance with said processed test data.
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Accused Products
Abstract
Techniques for performing wafer-level burn-in and test of semiconductor devices include a test substrate having active electronic components such as ASICs mounted to an interconnection substrate or incorporated therein, metallic spring contact elements effecting interconnections between the ASICs and a plurality of devices-under-test (DUTs) on a wafer-under-test (WUT), all disposed in a vacuum vessel so that the ASICs can be operated at temperatures independent from and significantly lower than the burn-in temperature of the DUTs. The spring contact elements may be mounted to either the DUTs or to the ASICs, and may fan out to relax tolerance constraints on aligning and interconnecting the ASICs and the DUTs. Physical alignment techniques are also described.
227 Citations
52 Claims
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1. A method comprising:
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providing a semiconductor wafer comprising unsingulated dice, each of said die comprising a plurality of pads;
permanently attaching a plurality of resilient conductive contact elements to said pads;
providing a test substrate comprising;
a plurality of wafer contacts, and active electronics;
bringing ones of said wafer contacts into electrical contact with ones of said resilient, conductive contact elements;
receiving at said test substrate test data from a semiconductor tester;
said active electronics processing said test data; and
exercising at least a portion of said wafer in accordance with said processed test data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. An apparatus comprising:
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a semiconductor wafer comprising unsingulated dice, each of said die comprising a plurality of pads;
a plurality of resilient conductive contact elements permanently attached to said pads;
a semiconductor tester configured to generate data controlling exercise of said dice of said wafer; and
a test substrate in communication with said semiconductor tester, said test substrate comprising;
a plurality of wafer contacts, ones of said wafer contacts pressed against ones of said resilient, conductive contact elements, and active electronics configured to process data received from said semiconductor tester. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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46. An apparatus comprising:
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a semiconductor wafer comprising unsingulated dice, each of said die comprising a plurality of pads, a plurality of interconnection means each for providing resilient, pressure-based electrical connections to one of said pads, each of said interconnection means being permanently attached to one of said pads, semiconductor tester means for generating data controlling exercise of said dice of said wafer; and
interface means for providing electrical connections between said semiconductor tester and said interconnection means, said interface means comprising processing means for processing data relating to exercising said dice of said wafer. - View Dependent Claims (47, 48, 49, 50, 51, 52)
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Specification