Reconfigurable artificial magnetic conductor using voltage controlled capacitors with coplanar resistive biasing network

• US 6,525,695 B2
• Filed: 04/30/2001
• Issued: 02/25/2003
• Est. Priority Date: 04/30/2001
• Status: Expired due to Fees

• Current Assignee: Titan Aerospace Electronics Division
• Original Assignee: E-Tenna Corporation
• Inventors: McKinzie, William E. III
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): VANNUCCI, JAMES
• Application Number:
  US09/845,393
• Publication Number:
  US 20020167456A1
• Time in Patent Office: 666 Days
• Field of Search: 343/756, 343/700.MS, 343/909, 343/910, 343/787, 343/795, 343/833, 343/754, 343/755, 359/248
• US Class Current: 343/756
• CPC Class Codes: H01Q 15/0066 said selective devices being reconfigurable, tunable or controllable, e.g. using switches
• CPC Class Codes: H01Q 15/008 said selective devices having Sievenpipers' mushroom elements
• CPC Class Codes: H01Q 3/46 Active lenses or reflecting arrays

Abstract

A frequency reconfigurable artificial magnetic conductor (AMC) includes a ground plane, a spacer layer disposed adjacent the ground plane and a plurality of vias in electrical contact with the ground plane and extending from a surface of the ground plane in direction of the spacer layer. The AMC further includes a frequency selective surface (FSS) disposed on the spacer layer and including a periodic pattern of bias node patches alternating with ground node patches, the ground node patches being in electrical contact with respective vias of the plurality of vias, and components between selected bias node patches and ground node patches, the components having a capacitance which is variable in response to a bias voltage. A network of bias resistors between adjacent bias node patches provides the tuning voltage.

Claims

1. An artificial magnetic conductor (AMC) comprising:

a frequency selective surface (FSS) including

a single layer of conductive patches, one group of conductive patches being electrically coupled to a reference potential, a second group of conductive patches forming bias nodes;

voltage variable capacitive elements coupling patches of the one group of conductive patches with patches of the second group, and

decoupling resistors connected between the patches of the second group.

2. The AMC of claim 1 further comprising:

a bias line conveying a bias voltage.

3. The AMC of claim 2 further comprising:

decoupling resistors connected between the bias line and a first row of conductive patches of the second group.

4. The AMC of claim 3 wherein the bias voltage is variable for tuning resonant frequency of the AMC.

5. The AMC of claim 1 further comprising:

a ground plane;

a spacer layer separating the ground plane and the FSS; and

vias through the spacer layer which electrically couple conductive patches of the one group with the ground plane.

6. The AMC of claim 1 wherein the first group of conductive patches and the second group of conductive patches are arranged in an alternating pattern in both transverse directions.

7. The AMC of claim 1 wherein the first group of conductive patches and the second group of conductive patches are arranged in a checkerboard pattern.

8. The AMC of claim 7 wherein each conductive patch of the second group in the checkerboard pattern is coupled through respective voltage variable capacitive elements to all surrounding conductive patches of the first group.

9. The AMC of claim 7 wherein conductive patches of the second group in the checkerboard pattern are coupled through respective voltage variable capacitive elements to some surrounding conductive patches of the first group.

10. The AMC of claim 7 wherein the decoupling resistors form a regular mesh.

11. The AMC of claim 10 wherein the decoupling resistors form a square lattice in association with the checkerboard pattern.

12. The AMC of claim 1 wherein the voltage variable capacitive elements comprise varactor diodes.

13. The AMC of claim 1 wherein the voltage variable capacitive elements comprise voltage variable microelectrical-mechanical system (MEMS) capacitors.

14. The AMC of claim 1 wherein the voltage variable capacitive elements comprise voltage variable thick film capacitors.

15. The AMC of claim 1 wherein the voltage variable capacitive elements comprise voltage variable thin film capacitors.

16. The AMC of claim 1 wherein the voltage variable capacitive elements comprise a bulk tunable dielectric material.

17. The AMC of claim 16 wherein the voltage variable capacitive elements comprise ferroelectric ceramic capacitors.

18. An artificial magnetic conductor (AMC) comprising:

a ground plane;

a spacer layer disposed adjacent the ground plane;

a plurality of vias in electrical contact with the ground plane and extending from a surface of the ground plane in direction of the spacer layer;

a frequency selective surface disposed on the spacer layer and including;

a periodic pattern of bias node patches alternating with ground node patches, the ground node patches being in electrical contact with respective vias of the plurality of vias;

components between selected bias node patches and ground node patches, the components having a capacitance which is variable in response to a bias voltage; and

a network of bias resistance elements connected between adjacent bias node patches.

19. The AMC of claim 18 wherein the bias resistance elements comprise decoupling resistors fabricated using a resistive film.

20. The AMC of claim 18 wherein the bias resistance elements comprise surface mounted chip resistors.

21. The AMC of claim 18 wherein the components comprise varactor diodes.

22. The AMC of claim 18 wherein the components include respective components coupled between a bias node patch and each surrounding ground node patch.

23. The AMC of claim 22 wherein the components comprise varactor diodes.

24. The AMC of claim 18 wherein the components include respective components coupled between alternate ground node patches and each surrounding bias node patch.

25. The AMC of claim 18 wherein the plurality of vias includes a respective via for each bias node patch and each ground node patch, only the each ground node patch being in electrical contact with its respective via.

26. The AMC of claim 18 wherein the plurality of vias omit vias associated with the bias node patches.

27. An artificial magnetic conductor (AMC) comprising:

means for forming a backplane for the AMC;

a frequency selective surface (FSS) including means for varying effective sheet capacitance of the FSS, including resistive means for distributing a common bias voltage; and

a spacer layer separating the means for forming a back plane and the FSS, the spacer layer including a plurality of vias extending substantially normal to the FSS.

28. The AMC of claim 27 wherein the means for varying capacitance of the FSS comprises:

a pattern of conductive patches printed on one side of the FSS, one group of conductive patches forming ground nodes, a second group of conductive patches forming bias nodes;

voltage variable capacitive elements responsive to the common bias voltage between a respective bias node and a respective ground node; and

a bias line for biasing the bias nodes.

29. The AMC of claim 28 wherein the means for forming a backplane comprises a ground plane in electrical contact with vias of the plurality of vias respectively associated with the ground nodes for grounding the ground nodes.

30. The AMC of claim 28 wherein the resistive means comprises:

a network of resistors disposed between the bias nodes.

31. The AMC of claim 27 wherein the means for varying capacitance comprises:

a tunable dielectric thick or thin film;

patterns of overlapping conducting patches on respective sides of the tunable dielectric film, each patch being associated with a via, vias associated with patches on a first side being in electrical contact with a bias line of the means for forming a backplane and vias associated with patches on a second side being in electrical contact with a ground line of the means for forming a backplane.

32. An artificial magnetic conductor (AMC) comprising:

a frequency selective surface (FSS) including

a tunable dielectric thick or thin film,

a first layer of conductive patches on one side of the tunable dielectric film,

a second layer of conductive patches on a second side of the tunable dielectric film, patches of the second layer overlapping at least in part patches of the first layer, and

decoupling resistance connected between the conductive patches of at least one of the first layer of conductive patches and the second layer of conductive patches;

a spacer layer including first vias associated with patches of the first layer and second vias associated with patches of the second layer; and

a backplane conveying bias signals to the first vias and the second vias.

33. The AMC of claim 32 further comprising a bias voltage source providing the bias signals to vary permittivity of the tunable dielectric film.

34. An artificial magnetic conductor (AMC) comprising:

a frequency selective surface (FSS) including

a tunable dielectric film,

a first layer of conductive patches on one side of the tunable dielectric film, and

a second layer of conductive patches on a second side of the tunable dielectric film, patches of the second layer overlapping at least in part patches of the first layer;

a spacer layer including vias associated with patches of the first layer;

a backplane conveying bias signals to the first vias; and

a resistive biasing network to apply a bias voltage to the tunable dielectric film.