Semiconductor device and electric power conversion device

• US 6,525,950 B1
• Filed: 09/01/2000
• Issued: 02/25/2003
• Est. Priority Date: 03/30/2000
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Mishima, Akira, Shirakawa, Shinji, Innami, Toshiyuki, Mashino, Keiichi, Fukumoto, Hideshi
• Primary Examiner(s): Sterrett, Jeffrey
• Assistant Examiner(s): Laxton, Gary L.
• Application Number:
  US09/653,164
• Time in Patent Office: 907 Days
• Field of Search: 363/144, 363/132, 363/137, 363/98, 363/17, 307/147, 307/148
• US Class Current: 363/144
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/19107 off-chip wires
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections

Abstract

A semiconductor power conversion device includes two bridge-connected semiconductor switches, an output terminal, and first and second pairs of positive and negative direct current terminals. First conductors connect the negative direct current terminals of the first and second pairs with the output terminal through one of the two bridge-connected semiconductor switches, while second conductors connect the positive direct current terminals of the first and second pairs with the other of the two bridge-connected semiconductor switches. A housing is provided, which includes the two bridge-connected semiconductor switches, and at least a portion of the first conductor and of the second conductor as a multilayer structure formed by sandwiching an insulator between the first and second conductors inside the housing. The first and second pairs of direct current terminals are arranged on one side of one plane of the housing.

Claims

1. A semiconductor device, comprising:

two bridge-connected semiconductor switches;

an output terminal;

a first pair of positive and negative direct current terminals, and a second pair of positive and negative direct current terminals;

first conductors for connecting the negative direct current terminals of said first and second pairs with said output terminal through one of said two-bridge-connected semiconductor switches;

second conductors for connecting the positive direct current terminals of said first and second pairs with the other of said two bridge-connected semiconductor switches; and

a housing for including said two bridge-connected semiconductor switches, wherein

at least a portion of a first conductor and a second conductor has a multilayer structure formed by sandwiching an insulator between said first and second conductors inside said housing; and

said first pair and second pair of direct current terminals are arranged on one side of one plane of said housing.

4. The semiconductor device as claimed in claim 1, wherein a capacitor is connected to a point between each pair of positive and negative direct current terminals.

9. The electric power conversion device as claimed in claim 4, wherein

one terminal of said electrolytic capacitor is connected to a positive-polarity side of said direct current terminals of said semiconductor device, and another terminal of said electrolytic capacitor is connected to a negative-polarity side of said direct current terminals of said semiconductor device.

10. The electric power conversion device as claimed in claim 9, wherein said semiconductor device converts a direct current to an alternating current with a variable voltage and a variable frequency, said electrolytic capacitor suppressing a variation in said direct current.

2. A semiconductor device, comprising:

six bridge-connected semiconductor switches;

one set of 3-phase alternating current terminals;

a first pair of positive and negative direct current terminals, and a second pair of positive and negative direct current terminals;

first conductors for connecting the negative direct current terminals of said first and second pairs with said 3-phase alternating current terminals through said six bridge-connected semiconductor switches;

second conductors for connecting the positive direct current terminals of said first and second positive and negative direct current terminal pairs with said six semiconductor switches; and

a case and a baseboard for including said six semiconductor switches, wherein

at least a portion of a first conductor and a second conductor has a multilayer structure formed by sandwiching an insulator between said first and second conductors inside said housing; and

said first and second p airs of direct current terminals are arranged on one side of an upper plane of said case.

5. The semiconductor device as claimed in claim 2, wherein a capacitor is connected to a point between each pair of positive and negative direct current terminals.

7. The semiconductor as claimed in claim 2, wherein at least said portions of said conductors are provided on said baseboard, through said insulator.

3. A semiconductor device, comprising:

an insulator sandwiched between at least a portion of a positive-polarity side conductor and at least a portion of a negative-polarity side conductor inside a case of said semiconductor device, said conductors bridge-connecting semiconductor switches in said semiconductor device; and

two positive-polarity direct current terminals and two negative-polarity direct current terminals provided respectively on said positive-polarity side conductor and said negative-polarity side conductor, wherein

one of said two positive-polarity terminals on said positive-polarity side conductor and one of said two negative-polarity terminal of said negative-polarity side conductor form a first pair of positive-polarity and negative-polarity direct current terminals;

the other of said two positive-polarity terminals on said positive polarity side conductor, and the other of said two negative polarity terminals of

said negative polarity side conductor form a second pair of positive-polarity and negative-polarity direct current terminals; and

said positive-polarity direct current terminals and said negative-polarity direct current terminals are provided on one side of an upper plane of a said case of said semiconductor device.

6. The semiconductor device as claimed in claim 3, wherein a capacitor is connected to a point between each pair of positive and negative direct current terminals.

8. An electric power conversion device, comprising:

a semiconductor device, comprising;

two bridge-connected semiconductor switches;

an output terminal;

a first pair of positive and negative direct current terminals and a second pair of positive and negative direct current terminals;

first conductors for connecting the negative direct current terminals of said first and second pairs with said output terminal through one of said two bridges-connect semiconductor switches;

second conductors for connecting the positive direct current terminals of said first and second pairs with the other of said two bridge-connected semiconductor switches; and

a housing for including said two bridge-connected semiconductor switches, wherein

at least a portion of a first conductor and a second conductor has a multilayer structure formed by sandwiching an insulator between said first and second conductors inside said housing; and

said first and second pairs of direct current terminals are arranged on one side of one plane of said housing; and

an electrolytic capacitor is connected to said direct current terminals of said semiconductor device.

11. An electric power conversion device, which includes a semiconductor device, comprising:

six bridge-connected semiconductor switches, one set of 3-phase alternating current terminals;

a first pair of positive and negative direct current terminals and a second pair of positive and negative direct current terminals;

first conductors for connecting the negative direct current terminals of said first and second pairs with said 3-phase alternating current terminals through said six bridge-connected semiconductor switches;

second conductors for connecting the positive direct current terminals of said first and second positive and negative direct current terminal pairs with said six semiconductor switches; and

a case and a baseboard for including said six semiconductor switches, wherein

at least a portion of a first conductor and a second conductor has a multilayer structure formed by sandwiching an insulator between said first and second conductors inside said case; and

said first and second pairs of direct current terminals are arranged on one side of an upper plane of said case;

said semiconductor device includes said 3-phase alternating current terminals into which an alternating current is inputted;

an electrolytic capacitor is connected to said direct current terminals of said semiconductor device; and

said direct current terminals of said semiconductor device are connected to said electrolytic capacitor.