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Two section blue laser diode with reduced output power droop

  • US 6,526,083 B1
  • Filed: 10/09/2001
  • Issued: 02/25/2003
  • Est. Priority Date: 10/09/2001
  • Status: Expired
First Claim
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1. A semiconductor laser structure comprising:

  • a sapphire substrate;

    a plurality of III-V nitride semiconductor layers formed on said sapphire substrate such that at least one of said plurality of III-V nitride semiconductor layers forms an active layer;

    a first active region formed in said active layer, including at least one junction between p-type and n-type material, for functioning as an amplifier;

    a second active region formed in said active layer, including at least one junction between p-type and n-type material, for functioning as an optical modulator;

    wherein a sufficient forward bias is applied to said first active region such that stimulated emission is caused to occur therein, a portion of said stimulated emission being directed into said second active region, and the optical loss of said second active region is varied to cause lasing from said semiconductor laser structure.

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