×

Intelligent photomask disposition

  • US 6,526,164 B1
  • Filed: 05/27/1999
  • Issued: 02/25/2003
  • Est. Priority Date: 05/27/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for determining if an undesirable feature on a photomask will adversely affect the performance of a semiconductor device On a wafer, said device being created by said photomask through a lithographic process, said method comprising the steps of:

  • (a) inspecting said photomask for defects;

    (b) measuring the size and location of said defects relative to features on said photomask;

    (c) classifying said defects by type of defect;

    (d) assigning an equivalent mask critical dimension error (EME) value to each of said features based on said size, said location and said type of defect, wherein said EME value for each defect is assigned by the equation;

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×