Wafer cleaning module and method for cleaning the surface of a substrate

• US 6,527,870 B2
• Filed: 10/12/2001
• Issued: 03/04/2003
• Est. Priority Date: 10/05/2000
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Gotkis, Yehiel
• Primary Examiner(s): CARRILLO, BIBI SHARIDAN
• Application Number:
  US09/976,856
• Publication Number:
  US 20020040724A1
• Time in Patent Office: 508 Days
• Field of Search: 134/1, 134/1.3, 134/6, 134/7, 134/13, 134/19, 134/25.5, 134/32, 134/34, 134/35, 134/42, 134/902, 451/36, 451/307, 15/77, 15/882, 151/02, 438/690, 438/691, 438/692, 438/693
• US Class Current: 134/6
• CPC Class Codes: B08B 7/00 Cleaning by methods not provided for in a single other subclass or a single group in this subclass
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/67046 using mainly scrubbing means, e.g. brushes
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

In a method for cleaning a surface of a substrate an amount of a solution is applied on a surface of the substrate. After the solution is applied on the surface, crystallization of the solution is initiated to form a liquid-crystal mixture. Once the liquid-crystal mixture is formed, relative motion between the liquid-crystal mixture and the substrate is created to dislodge contaminants adhered to the substrate. In one alternative method, the solution is applied on a pad. In another alternative method, the substrate is place in a bath of the solution. A wafer cleaning module also is described.

Claims

1. A method for cleaning a surface of a semiconductor wafer, comprising:

applying a liquid solution on a pad;

initiating crystallization of the liquid solution to form a liquid-crystal mixture on the pad by adjusting a temperature of the liquid solution to a temperature at which crystallization occurs; and

cleaning a surface of the semiconductor wafer by contacting the surface of the semiconductor wafer with a portion of the pad having the liquid-crystal mixture thereon.

2. The method of claim 1, wherein the liquid solution is a saturated solution.

3. The method of claim 1, wherein the pad is selected from a group consisting of a belt pad, a rotary pad, and an orbital pad.

4. A wafer cleaning module, comprising:

a belt pad;

a dispenser for dispensing a saturated solution onto the belt pad, the dispenser being disposed above the belt pad;

a carrier head for supporting a semiconductor wafer, the carrier head being disposed above the belt pad; and

a crystallization inducer for inducing crystallization of the saturated solution on the belt pad, the crystallization inducer being disposed above the belt pad, the crystallization inducer further being situated between the dispenser and the carrier head.

5. The wafer cleaning module of claim 4, wherein the crystallization inducer is an infrared lamp.