Configurable plasma volume etch chamber

• US 6,527,911 B1
• Filed: 06/29/2001
• Issued: 03/04/2003
• Est. Priority Date: 06/29/2001
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Yen, Bi-Ming, Li, Lumin, Ni, Tuqiang, Hemker, David
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/895,537
• Time in Patent Office: 613 Days
• Field of Search: 156/345.43, 156/345.47, 118/723.E
• US Class Current: 156/345.43
• CPC Class Codes: H01J 37/32568 Relative arrangement or disposition of electrodes; moving means
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means

Abstract

A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.

Claims

1. A plasma processing chamber, comprising;

a bottom electrode configured to support a substrate for processing;

a top electrode located over the bottom electrode; and

a plasma confinement assembly designed to transition between a closed orientation and an open orientation, the closed orientation defining a first volume for plasma during processing and the open orientation defining a second volume for plasma during processing, wherein the first volume is smaller than the second volume.

2. A plasma processing chamber as recited in claim 1, wherein the confinement assembly includes a plurality of plasma confinement rings.

3. A plasma processing chamber as recited in claim 2, wherein the plurality of plasma confinement rings transition together.

4. A plasma processing chamber as recited in claim 2, wherein the plurality of plasma confinement rings are spaced apart by spacers, and the plasma confinement rings and spacers are attached to shafts.

5. A plasma processing chamber as recited in claim 1, wherein shafts are designed to move so as to transition the plasma confinement assembly between the closed and open orientation.

6. A plasma processing chamber as recited in claim 1, wherein plasma processing in the open orientation enables an increased plasma flow rate and an increased bias voltage.

7. A plasma processing chamber as recited in claim 1, wherein plasma processing in the closed orientation enables higher density plasma generation, relative to plasma processing in the open orientation.

8. A plasma processing chamber as recited in claim 7, wherein in the closed orientation, higher pressure plasma processing is enabled, relative to plasma processing in the open orientation.

9. A plasma processing chamber as recited in claim 1, further comprising:

a confinement structure configured to surround the bottom electrode at a level below a level of the bottom electrode.

10. A plasma processing chamber as recited in claim 9, wherein the confinement structure is attached to a liner of the plasma processing chamber.

11. A plasma processing chamber as recited in claim 9, wherein the confinement structure is adjustable in position, the position being adjustable closer or further from the level of the bottom electrode, wherein an adjustment in the position changes the second volume.

12. A plasma etch process chamber having configurable plasma volume, comprising:

configurable plasma confinement rings defining a plurality of separate parallel passages that allow gas flow through the configurable plasma confinement rings from an inner surface to an outer surface, the parallel passages being spaced apart in a direction normal to that of the flow of gases through the parallel passages, the configurable plasma confinement rings being disposed around a pair of parallel electrodes defining therebetween a first plasma confinement region where a plasma is generated, and the parallel passages being proportioned for essentially confining the plasma within the first plasma confinement region by neutralizing ion particles created in the plasma when the ion particles pass through the parallel passages; and

an upper chamber liner configured to line an upper region of the plasma etch process chamber and having an outer plasma confinement structure with a plurality of apertures;

wherein the configurable plasma confinement rings are configurable to be positioned in one of an extended position defining the first plasma confinement region and a retracted position defining a second plasma confinement region.

13. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein the second plasma confinement region is bounded by the pair of parallel electrodes, the upper chamber liner, and the outer plasma confinement structure.

14. A plasma etch process chamber having configurable plasma volume as recited in claim 13, wherein the plurality of apertures of the outer plasma confinement structure are proportioned for essentially confining the plasma within the second plasma confinement region.

15. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein the upper chamber liner is configured to position the outer plasma confinement structure in one of a plurality of positions.

16. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein the configurable plasma confinement rings are constructed of a dielectric.

17. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein the configurable plasma confinement rings include spacers, and the configurable plasma confinement rings and spacers are attached to shafts.

18. A plasma etch process chamber having configurable plasma volume as recited in claim 17, wherein the shafts are designed to transition the configurable plasma confinement rings between the extended position and the retracted position.

19. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein plasma processing with the configurable plasma confinement rings in the retracted position enables an increased plasma flow rate and an increased bias voltage.

20. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein plasma processing with the configurable plasma confinement rings in the extended position enables higher density plasma generation, relative to plasma processing with the configurable plasma confinement rings in the retracted position.

21. A plasma etch process chamber having configurable plasma volume as recited in claim 12, wherein the configurable plasma confinement rings in the extended position enables higher pressure plasma processing is relative to plasma processing with the configurable plasma confinement rings in the retracted position.

22. A semiconductor wafer processing chamber having a configurable plasma volume, comprising:

an upper electrode;

a lower electrode being parallel to the upper electrode and being configured to receive a semiconductor wafer for processing;

a first plasma confinement region having the upper electrode as an upper boundary and the lower electrode as a lower boundary;

a second plasma confinement region having the upper electrode as an upper boundary, the lower electrode as a lower boundary, and an upper chamber liner as a lateral boundary, wherein the upper chamber liner is configured with an outer plasma confinement structure and configured to line an upper region of the semiconductor wafer processing chamber; and

a plasma confinement assembly having at least one plasma confinement ring, a plurality of spacers, and a plurality of shafts, the plasma confinement assembly being positioned within the semiconductor wafer process chamber disposed around the first plasma confinement region and defining a plurality of parallel circumferential passages;

wherein the plasma confinement assembly is configured to be positioned in one of an extended position to define the first plasma confinement region, and a retracted position to define the second plasma confinement region.

23. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein the plurality of shafts are designed to transition the plasma confinement assembly between the extended position and the retracted position.

24. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein plasma processing with the plasma confinement assembly in the retracted position enables an increased plasma flow rate and an increased bias voltage.

25. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein plasma processing with the plasma confinement assembly in the extended position enables higher density plasma generation, relative to plasma processing with the plasma confinement assembly in the retracted position.

26. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 25, wherein plasma processing with the plasma confinement assembly in the extended position enables higher pressure plasma processing relative to plasma processing with the plasma confinement assembly in the retracted position.

27. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein the outer plasma confinement structure includes a plurality of apertures proportioned for essentially confining plasma within the second plasma confinement region.

28. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 27, wherein the outer plasma confinement structure is adjustable in position, the position being adjustable closer or further from a level of the bottom electrode, and wherein an adjustment in the position changes a volume of the second plasma confinement region.

29. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 28, wherein the outer plasma confinement structure is constructed of a dielectric.

30. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein the at least one plasma confinement ring is constructed of a dielectric.

31. A semiconductor wafer processing chamber having a configurable plasma volume as recited in claim 22, wherein the plasma confinement assembly has six plasma confinement rings.