Method for fabricating improved mirror arrays for physical separation

• US 6,527,965 B1
• Filed: 02/09/2001
• Issued: 03/04/2003
• Est. Priority Date: 02/09/2001
• Status: Expired due to Fees

• Current Assignee: Nayna Networks, Inc.
• Original Assignee: Nayna Networks, Inc.
• Inventors: Sathe, Abhijeet D., Yang, Xiao, Gee, Dale A.
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): Culbert, Roberts P
• Application Number:
  US09/780,845
• Time in Patent Office: 753 Days
• Field of Search: 216/2, 216/24, 216/65, 216/66, 438/7, 438/33, 438/68, 438/462, 438/463, 438/464, 438/460, 438/712, 438/719, 438/734, 438/690, 219/121.69, 219/121.72, 219/121.85
• US Class Current: 216/24
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/16 Composite materials , e.g. fibre reinforced
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/40 taking account of the properties of the material involved

Abstract

A method for fabricating an array of mirrors disposed on a die from a substrate. The method includes placing a substrate comprising a plurality of die thereon on a stage. Each of the die comprises a plurality of movable mirror devices in an array configuration. Each die comprises a peripheral region defining a street that surrounds the array configuration. The method forms a plurality of tabs that join one die to another die in the street of the substrate. Each of the tabs also is separated from each other in a sequential manner by a recessed region between at least two of the tabs. The street defined by the tabs and the recessed region defined therebetween in a sequential manner.

Claims

1. A method for fabricating an array of mirrors disposed on a die from a substrate, the method comprising:

placing a substrate comprising a plurality of die thereon on a stage, each of the die comprising a plurality of to be movable mirror devices in an array configuration, each die comprising a peripheral region defining a street that surrounds the array configuration;

forming a plurality of tabs that join one die to another die in the street of the substrate, each of the tabs also being separated from each other in a sequential manner by a recessed region between at least two of the tabs, wherein the street is defined by the tabs and the recessed region defined therebetween in a sequential manner; and

directing a beam of high intensity electromagnetic radiation at the street between the one die and the other die to ablate each of the tabs that joins the one die to the other die to separate the one die from the other die to free the die comprising the mirror array from the other dice on the substrate.

2. The method of claim 1 wherein each of the mirror device comprising a plurality of torsion bars that hold the mirror device in place.

3. The method of claim 1 wherein the substrate is a silicon wafer.

4. The method of claim 1 wherein the recessed region is defined along the entire thickness of the substrate.

5. The method of claim 1 wherein the high intensity light is an Nd:

YAG source.

6. The method of claim 1 wherein each of the tabs comprises a thickness of at least 100 microns.

7. The method of claim 1 wherein each of the tabs comprises a thickness of at least 200 microns.

8. The method of claim 1 wherein the tab forming step comprises reactive ion etching.

9. The method of claim 1 wherein the tab forming step comprises a first masking and etching step to form a recessed tab region and a second etching step to define openings between each of the tabs.

10. The method of claim 8 wherein the reactive ion etching comprises a deep reactive ion etching process.

11. A method of fabricating an array of mirrors disposed on a die from a substrate, the method comprising:

placing a substrate comprising a plurality of die thereon on a stage, each of the die comprising a plurality of to be movable mirror devices in an array configuration, each die comprising a peripheral region defining at least one street that defines a border between one die from another die, the street having at least one tab that joins the one die to another die, the tab having a thickness of at least 100 microns, the thickness including an upper region that extends to a lower region;

etching the street to reduce a thickness of the street using a deep reactive ion etching process from an inductively coupled plasma source to produce a region having a depth to width ratio of at least five and greater, while forming a coating on vertical edges of the etched street region to prevent substantial etching in a later direction.

12. The method of claim 11 wherein each of the mirror device comprising a plurality of torsion bars that hold the movable mirror device in place.

13. The method of claim 11 wherein the substrate is selected from a silicon wafer.

14. The method of claim 11 wherein the recessed region is defined along the entire thickness of the substrate.

15. The method of claim 11 wherein the street has a width of more than 50 microns.

16. The method of claim 11 further comprising ablating the tab using a high energy radiation source.

17. The method of claim 11 wherein each of the tabs comprises a thickness of at least 200 microns.

18. The method of claim 11 wherein the substrate comprises a surface defined by an x and y coordinate, the substrate comprising the thickness defined by a z coordinate.

19. The method of claim 18 wherein the upper portion of the tab is defined by a z coordinate that is spatially closer to a source of the beam than a z-coordinate that defines the lower portion of the tab.

20. A method for forming an array of movable mirror devices, the method comprising:

placing a substrate comprising a plurality of die thereon on a stage, each of the die comprising a plurality of to be movable mirror devices, each of the to be movable mirror devices having a cavity region defined around each of the mirror devices, in an array configuration, each die comprising a peripheral region defining at least one street that defines a border between one die from another die, the street having at least one tab that joins the one die to another die, the tab having a thickness of at least 100 microns, the thickness including an upper region that extends to a lower region;

simultaneously etching the cavity region and the street to reduce a thickness of the street using a deep reactive ion etching process from an inductively coupled plasma source to produce a region having a depth to width ratio of at least five and greater, while forming each of the movable mirror devices.