Method of forming a sion antireflection film which is noncontaminating with respect to deep-uv photoresists
First Claim
1. A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists on each of a series of silicon semiconductor substrates successively introduced into a reactor chamber, the method comprising depositing, by plasma-enhanced chemical vapor deposition, a silicon oxynitride antireflection film and treating said antireflection film with an oxygen plasma, wherein said reactor chamber is cleaned before the successive introduction of each of said substrates by:
- purging said reactor chamber using an oxygen-free gas plasma; and
depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.
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Abstract
A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists (DUV photoresists) on each of a series of silicon semiconductor substrates successively introduced into the same reactor chamber includes a step of plasma-enhanced chemical vapor deposition (PECVD) of a silicon oxynitride antireflection film and treatment of the antireflection film with an oxygen plasma. The reactor chamber is cleaned before the successive introduction of each of the substrates by purging the reactor chamber using an oxygen-free gas plasma and then depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases.
5 Citations
11 Claims
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1. A method of forming a silicon oxynitride antireflection film which is noncontaminating with respect to deep-ultraviolet photoresists on each of a series of silicon semiconductor substrates successively introduced into a reactor chamber, the method comprising depositing, by plasma-enhanced chemical vapor deposition, a silicon oxynitride antireflection film and treating said antireflection film with an oxygen plasma, wherein said reactor chamber is cleaned before the successive introduction of each of said substrates by:
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purging said reactor chamber using an oxygen-free gas plasma; and
depositing a silicon oxynitride blanket by plasma-enhanced chemical vapor deposition using precursor gases. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification