Substrate planarization with a chemical mechanical polishing stop layer

• US 6,528,389 B1
• Filed: 12/17/1998
• Issued: 03/04/2003
• Est. Priority Date: 12/17/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Gregory, John W., Allman, Derryl D. J.
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): Brock, II, Paul E
• Application Number:
  US09/213,948
• Time in Patent Office: 1,538 Days
• Field of Search: 438/424, 438/431, 438/697
• US Class Current: 438/424
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

This invention comprises an improved method of planarizing, an integrated circuit formed onto a semiconductor substrate and the planarized semiconductor substrate. Improved planarity is accomplished through the use a first and second stop layer separated by a filler layer. A first stop layer is used to define active and trench regions. A filler layer is then applied over the surface of the substrate and a second stop layer is applied on top of the filler layer. The second stop layer is patterned through etching. The pattern etched into the second stop layer is used to control chemical mechanical polishing that planarizes the surface. Patterns can be a reverse image of an active mask or a continuous pattern. In addition CMP can be used to create a condition of equilibrium planarity before the second stop layer is applied. The stop layers can comprise polysilicon, silicon nitride, or another material that is harder than a dielectric oxide material used as filler material. In addition a polysilicon stop layer may be exposed to a thermal cycle and oxidized into silicon dioxide after some degree of planarization to further regulate chemical mechanical polishing.

Claims

1. A method for planarizing a surface of a semiconductor substrate, the method comprising:

a) forming a PAD oxide layer on a silicon substrate wafer;

b) depositing on said PAD oxide layer a first stop layer;

c) defining active and trench regions in the substrate wafer by etching using an active mask image;

d) applying a filler layer across the substrate wafer surface;

e) applying a second stop layer on top of the filler layer;

f) etching through the second stop layer with a reverse mask image of the active mask image, the reverse mask image causing the second stop layer to be located over the entire trench regions, but not be located over the active regions; and

g) polishing the substrate surface with chemical mechanical until the first stop layer is encountered.

2. The method of claim 1 wherein the etching of the second stop layer stops when it encounters the filler layer.

3. The method of claim 1 wherein the etching of the second stop layer stops when it encounters the first stop layer.

4. The method of claim 1 wherein the PAD oxide layer comprises silicon dioxide.

5. The method of claim 1 wherein the PAD oxide layer is formed using thermal oxidation in a H₂O and O₂ gas ambient environment at a temperature in the range of 800°

C. to 1150°

C. and atmospheric pressure, for a period of between 5 minutes to 5 hours;

creating a substantially conformal thermal PAD oxide layer in the range of approximately 100 nanometers to 1 micron thick.

6. The method of claim 1 wherein the first stop layer comprises silicon nitride.

7. The method of claim 6 wherein the silicon nitride first stop layer is deposited using a plasma enhanced chemical vapor deposition operation with a mixture of SiH₂Cl2 and NH₃, while in a chamber having an ambient temperature in the range of approximately 800°

C. to 900°

C., at a pressure in the range of approximately 0.05 torr up to 2.0 torr, for a period ranging between approximately 10 minutes up to 4 hours, forming a layer of silicon nitride approximately 100 nanometers to 1 micron thick.

8. The method of claim 1 wherein the trench regions are defined to a depth of approximately 2,000 angstroms to 10,000 angstroms deep.

9. The method of claim 1 wherein the filler layer is silicon dioxide.

10. The method of claim 1 wherein the filler layer is approximately 100 nanometers to 10,000 nanometers thick.

11. The method of claim 1 wherein the second stop layer comprises silicon nitride.

12. The method of claim 1 wherein the second stop layer comprises polysilicon.

13. The method of claim 1 wherein the second stop layer comprises silicon carbide.

14. The method of claim 12 wherein the polysilicon is exposed to a thermal cycle and oxidized.