Semiconductor light-emitting element and method of manufacturing the same
First Claim
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1. A semiconductor light-emitting element, comprising:
- a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween;
a p-type layer laminated on said double hetero structure and containing a concentration of Zn as a dopant; and
a Zn diffusion preventing layer interposed between said double hetero structure and the p-type layer.
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Abstract
A semiconductor light-emitting element, including a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween, a p-type layer laminated on the double hetero structure and containing a concentration of Zn as a dopant, and a Zn diffusion preventing layer interposed between the active layer of the double hetero structure and the p-type layer having a high Zn concentration.
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Citations
11 Claims
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1. A semiconductor light-emitting element, comprising:
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a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween;
a p-type layer laminated on said double hetero structure and containing a concentration of Zn as a dopant; and
a Zn diffusion preventing layer interposed between said double hetero structure and the p-type layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor light-emitting element, comprising:
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a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the active layer sandwiched therebetween;
a p-type substrate containing Zn as a dopant, formed of a material transparent to the light emitted from said light emitting layer, and said p-type cladding layer included in said double hetero structure being formed on said p-type substrate; and
a Zn diffusion preventing layer formed between said double hetero structure and said p-type substrate. - View Dependent Claims (6, 7, 8, 11)
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9. An LED (light emitting diode), comprising:
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a p-type substrate containing Zn as a dopant;
a first electrode formed on the lower surface of said substrate;
a p-type buffer layer formed on the upper surface of said substrate;
a p-type adhesive layer bonded to said buffer layer;
a Zn diffusion preventing layer formed on said adhesive layer;
a p-type cladding layer formed on said Zn diffusion preventing layer;
an active layer formed on said p-type cladding layer;
an n-type cladding layer formed on said active layer;
an electrode diffusion layer formed on said n-type cladding layer; and
a second electrode formed on said electrode diffusion layer.
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10. A semiconductor laser, comprising:
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a substrate;
an n-type cladding layer formed on said substrate;
an active layer formed on said n-type cladding layer;
a lower p-type cladding layer formed on said active layer;
an etching stopper layer formed on said lower p-type cladding layer;
a ridge-shaped upper p-type cladding layer formed on said etching stopper layer;
a current facilitating layer formed on said upper p-type cladding layer;
an n-type layer formed around said upper p-type cladding layer and said current facilitating layer;
a Zn diffusion preventing layer formed commonly on said current facilitating layer and said n-type layer; and
a p-type layer containing Zn as a dopant and formed on said Zn diffusion preventing layer.
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Specification