Ultra high temperature transducer structure

• US 6,530,282 B1
• Filed: 01/31/2002
• Issued: 03/11/2003
• Est. Priority Date: 01/29/1999
• Status: Active Grant

• Current Assignee: Kulite Semiconductor Products Inc
• Original Assignee: Kulite Semiconductor Products Inc
• Inventors: Kurtz, Anthony D., Gardner, Robert, Goodman, Scott J.
• Primary Examiner(s): OEN, WILLIAM L
• Application Number:
  US10/066,086
• Time in Patent Office: 404 Days
• Field of Search: 737/15, 737/20, 737/21, 737/23, 737/17, 737/26, 737/27, 737/08, 737/53, 737/56, 29/253.5, 338/42
• US Class Current: 73/756
• CPC Class Codes: G01L 19/0061 Electrical connection means
• CPC Class Codes: G01L 19/0084 to the outside of the housing other details about the housing see G01L19/14
• CPC Class Codes: G01L 19/04 Means for compensating for effects of changes of temperature , i.e. other than electric compensation

Abstract

A hermetically sealed high temperature pressure transducer assembly including: a sensor wafer that includes a plurality of sensor structures and contact areas selectively interconnected and formed on a surface thereof is provided. A first header assembly coupled to the sensor wafer includes a plurality of pins, each of which are electrically coupled to an associated contact area. A second header assembly is coupled to the first assembly and to a sleeve, and includes a plurality of tubes into each of which one of the plurality of pins is positioned. A temperature insulated cable is partially positioned within the sleeve and includes a plurality of wires coupled to the pins. A third header apparatus is coupled to the sleeve and includes a plurality of closed-ended tubes for serving as leads, where each one of the plurality of wires is partially positioned in and coupled to a respective closed-end tube.

Claims

1. A method for forming a thermally insulated pressure transducer assembly comprising the steps of:

forming at least one piezoresistive structure on a first side of a first wafer said wafer further including a second side adapted to be exposed to a pressure to be measured;

forming at least one contact area electrically coupled to said at least one piezoresistive structure on said first side of said first wafer;

coupling a second wafer including at least one aperture to said first side of said wafer, such that said at least one aperture is aligned with said at least one contact area;

coupling a first header assembly including at least one pin to said second wafer, such that said at least one pin is electrically coupled to said at least one contact area; and

,

coupling a second header assembly including at least one tube to said first header, such that said at least one pin makes electrical contact with said at least one tube.

2. The method of claim 1, further comprising the step of filling said at least one aperture with a glass-metal frit, wherein said frit provides electrical contact between said at least one contact area and said at least one pin.

3. The method of claim 1, wherein said first header comprises a metallic portion and a glass portion.

4. The method of claim 1, further comprising the step of coupling a first sleeve between said first header and said second header.

5. The method of claim 1, further comprising:

in a first mode, coupling a first sleeve having a first configuration between said first header and said second header to form an absolute sensor; and

in a second mode, coupling a first sleeve having a second configuration between said first header and said second header to form a differential sensor.

6. The assembly of claim 1, wherein said step of coupling said second header to said first header, such that said at least one pin makes electrical contact with said at least one tube comprises the step of crimping said at least one pin within said at least one tube.

7. The method of claim 1, further comprising the steps of:

providing a thermally insulated cable including at least one first end lead and at least one second end lead, wherein said at least one first end lead is electrically communicable with said at least one second end lead; and

,

electrically coupling said at least one first end lead to said at least one tube.

8. The assembly of claim wherein said step of coupling said second header to said first header, such that said at least one pin makes electrical contact with said at least one tube and said step of electrically coupling said at least one first end lead to said at least one tube comprise the step of crimping said at least one pin and said at least one first end lead within said at least one tube.

9. The assembly of 7, further comprising the steps of:

at least partially encapsulating said thermally insulated cable into a first sleeve; and

,

coupling said first sleeve to a third header assembly including at least one closed-ended tube such that said at least one second end lead is electrically coupled to said at least one closed-ended tube.

10. The method of claim 9, further comprising the step of crimping said at least one second end lead within said at least one closed-ended tube such that said at least one closed-ended tube is electrically coupled to said at least one piezoresistive element.

11. The method of claim 9, further comprising the step:

in a first mode, coupling a first port having a first configuration to said second header such that said thermally insulated cable passes there through to form an absolute pressure transducer; and

,

in a second mode, coupling a first port having a second configuration to said second header such that said thermally insulated cable passes there through to form a differential pressure transducer.