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Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications

  • US 6,531,193 B2
  • Filed: 12/11/2000
  • Issued: 03/11/2003
  • Est. Priority Date: 07/07/1997
  • Status: Expired due to Term
First Claim
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1. A method for forming a silicon dioxide film on a substrate comprising the steps of:

  • (a) heating said substrate to a deposition temperature of between about 25°

    C. to 250°

    C.;

    (b) providing tetramethylsilane (TMS) in a gas flow amount up to about 1,000 sccm, and an oxygen containing gas in a plasma discharge;

    (c) developing pressure between about 0.001 Torr and 100 Torr; and

    (d) depositing SiO2 on said substrate.

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