Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
First Claim
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1. A method for forming a silicon dioxide film on a substrate comprising the steps of:
- (a) heating said substrate to a deposition temperature of between about 25°
C. to 250°
C.;
(b) providing tetramethylsilane (TMS) in a gas flow amount up to about 1,000 sccm, and an oxygen containing gas in a plasma discharge;
(c) developing pressure between about 0.001 Torr and 100 Torr; and
(d) depositing SiO2 on said substrate.
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Abstract
Silicon dioxide thin film have been deposited at temperatures from 25° C. to 250° C. by plasma enhanced chemical vapor deposition (PECVD) using tetramethylsilane (TMS) as the silicon containing precursor. At these temperatures, the PETMS oxide films have been found to exhibit adjustable stress and adjustable conformality. Post deposition annealing in forming gas at or below the deposition temperatures has been shown to be very effective in improving the PETMS oxide properties while preserving the low temperature aspect of the PETMS oxides.
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Citations
27 Claims
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1. A method for forming a silicon dioxide film on a substrate comprising the steps of:
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(a) heating said substrate to a deposition temperature of between about 25°
C. to 250°
C.;
(b) providing tetramethylsilane (TMS) in a gas flow amount up to about 1,000 sccm, and an oxygen containing gas in a plasma discharge;
(c) developing pressure between about 0.001 Torr and 100 Torr; and
(d) depositing SiO2 on said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for controlling during deposition the stress level of a silicon dioxide film which is formed on a substrates comprising the steps of:
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(a) heating said substrate to a deposition temperature of between about 25°
C. to 250°
C.;
(b) providing TMS in a gas flow amount up to about 1,000 sccm, and an oxygen containing gas in a plasma discharge;
(c) developing a pressure between about 0.001 Torr and 100 Torr; and
(d) depositing SiO2 on said substrate, wherein said silicon dioxide film exhibits a stress level between about −
1.0 GPa to 0.5 GPa.- View Dependent Claims (22, 23, 24, 25, 26, 27)
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Specification