Method and apparatus for using across wafer back pressure differentials to influence the performance of chemical mechanical polishing

• US 6,531,397 B1
• Filed: 01/09/1998
• Issued: 03/11/2003
• Est. Priority Date: 01/09/1998
• Status: Expired due to Term

• Current Assignee: Bell Semiconductor, LLC (Hilco Inc. (d/b/a Hilco Global))
• Original Assignee: LSI Logic Corporation (Broadcom, Inc.)
• Inventors: Lee, Dawn M., Nagahara, Ronald J.
• Primary Examiner(s): Utech, Benjamin
• Assistant Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US09/005,364
• Time in Patent Office: 1,887 Days
• Field of Search: 438/692, 438/693, 438/691, 216/38, 216/88, 451/41, 451/288, 451/289, 451/388, 451/389
• US Class Current: 438/692
• CPC Class Codes: B24B 37/30 for single side lapping of plane surfaces

Abstract

Methods and apparatus for planarizing the surface of a semiconductor wafer by applying non-uniform pressure distributions across the back side of the wafer are disclosed. According to one aspect of the present invention, a chemical mechanical polishing apparatus for polishing a first surface of a semiconductor wafer includes a polishing pad which polishes the first surface of the semiconductor wafer. The apparatus also includes a first mechanism which is used to hold, or otherwise support, the wafer during polishing, and a second mechanism that is used to apply a non-uniform pressure distribution through the first mechanism, directly onto a second surface of the wafer. The second mechanism is further used to facilitate polishing the first surface of the semiconductor wafer such that the first surface of the semiconductor wafer is evenly polished. In one embodiment, the second mechanism is arranged to apply both positive pressure and negative pressure substantially simultaneously across the second surface of the semiconductor wafer.

Claims

1. A method for planarizing a first surface of a semiconductor wafer using chemical mechanical polishing, the method comprising:

holding the semiconductor wafer over a chemical mechanical polishing pad;

applying a non-uniform pressure distribution directly over a second surface of the semiconductor wafer, said non-uniform pressure distribution comprising a plurality of different positive pressures and at least one negative pressure applied simultaneously at different positions over the second surface of the semiconductor wafer; and

polishing the first surface of the semiconductor wafer using the chemical mechanical polishing pad, wherein the non-uniform pressure distribution is applied directly over the second surface of the semiconductor wafer while the first surface of the semiconductor wafer is polished.

2. A method as recited in claim 1 wherein applying the non-uniform pressure distribution directly over the second surface of the semiconductor wafer includes applying pressurized air directly over the second surface of the semiconductor wafer.

3. A method as recited in claim 1, wherein applying the non-uniform pressure distribution directly over the second surface of the semiconductor wafer includes applying a vacuum directly over the second surface of the semiconductor wafer.

4. A method as recited in claim 1, wherein the non-uniform pressure distribution applied directly over the second surface of the semiconductor wafer comprises air pressures P1, P2, and P3.

5. A method as recited in claim 4, wherein air pressure P1 is a negative pressure, and air pressures P2 and P3 are positive pressures.