Bias method and circuit for distortion reduction

• US 6,531,924 B2
• Filed: 11/15/2001
• Issued: 03/11/2003
• Est. Priority Date: 04/18/2001
• Status: Expired due to Term

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: Aparin, Vladimir
• Primary Examiner(s): Cunningham, Terry D.
• Assistant Examiner(s): TRA, ANH QUAN
• Application Number:
  US10/002,377
• Publication Number:
  US 20020175735A1
• Time in Patent Office: 481 Days
• Field of Search: 330/289, 330/296, 327/530, 327/427
• US Class Current: 330/296
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03F 1/3241 using predistortion circuits H03F1/3211, H03F1/3217 take precedence
• CPC Class Codes: H03F 1/3276 using the nonlinearity inherent to components, e.g. a diode

Abstract

The present invention provides a technique for selective cancellation of the 2^nd-order or 3^rd-order nonlinearity of a transistor. Any nonlinearity is a function of the bias voltage of a transistor. In many cases, this function is such that, at a particular bias voltage, nonlinearity is zero. The invention provides a bias circuit that generates the optimum bias voltage for a transistor at which its selected nonlinearity is zero. Mathematically, the nonlinearity can be represented by a sum of multiple components where some components have negative sign. The components are proportional to the DC currents of the transistor at bias voltages differing by a small amount. The bias circuit includes bias transistors that are scaled versions of the main transistor. Each bias transistor generates a DC current representing one of the components. The currents are combined according to the signs of the respective components to form a DC signal proportional to the selected nonlinearity. A feedback circuit senses the DC signal and generates the bias voltages of the bias transistors that force the DC signal to be zero. One of the bias voltages is applied to the main transistor resulting in cancellation of its selected nonlinearity. The system may be readily implemented using the integrated circuit technology such that the transistors of the bias circuit are closely matched to each other and to the main transistor. The distortion cancellation effect provided by the present invention exhibits low sensitivity to variations in the transistor processing and operational temperature.

Claims

1. A method of biasing a transistor by providing a biasing circuit, characterized by:

generating a direct current (DC) signal proportional to a selected nonlinearity; and

using the DC signal to generate the bias voltage of the transistor at which the selected nonlinearity is zero.

2. The method of claim 1 wherein the selected nonlinearity is a second order nonlinearity and the DC signal comprises first, second and third portions.

3. The method of claim 2 wherein the first, second and third portions are combined to form the DC signal.

4. The method of claim 1 wherein the selected nonlinearity is a third order nonlinearity and the DC signal comprises first, second, third and fourth portions.

5. The method of claim 4 wherein the first, second, third and fourth portions are combined to form the DC signal.

6. The method of claim 1, further comprising providing a current mirror to bias circuit elements that generate the DC signal.

7. The method of claim 1, further comprising providing a feedback circuit to sense the DC signal and generate the bias voltage at which the DC signal and the selected nonlinearity are zero.

8. The method of claim 1 wherein the DC signal is a single-ended or differential current.

9. The method of claim 1 wherein the DC signal is a single-ended or differential voltage.

10. A transistor biasing circuit, characterized by:

a plurality of bias transistors each generating a DC current that is a portion of a DC signal proportional to a selected nonlinearity;

a combining circuit that combines the DC currents to form the DC signal; and

a feedback circuit to sense the DC signal and generate an input bias voltage of the bias transistors that cancels the selected nonlinearity.

11. The circuit of claim 10 wherein the selected nonlinearity is a second order nonlinearity characterized by first, second and third components, the plurality of bias transistors comprises first, second and third bias transistors generating DC signal portions proportional to the first, second and third components, respectively.

12. The circuit of claim 11 wherein the combining circuit combines the first, second and third DC signal portions to form the DC signal.

13. The circuit of claim 12 wherein the feedback circuit is configured for sensing the DC signal and generating the input bias voltage of the bias transistors that cancels the second order nonlinearity.

14. The circuit of claim 10 wherein the selected component is a third order nonlinearity characterized by first, second, third and fourth components, the plurality of bias transistors comprises first, second, third and fourth bias transistors generating DC signal portions proportional to the first, second, third and fourth components, respectively.

15. The circuit of claim 14 wherein the combining circuit combines the first, second, third and fourth DC signal portions to form the DC signal.

16. The circuit of claim 15 wherein the feedback circuit is configured for sensing the DC signal and generating the input bias voltage of the bias transistors that cancels the third order nonlinearity.

17. The circuit of claim 10 wherein the combining circuit includes a current mirror coupled to the plurality of bias transistors to bias the plurality of bias transistors.

18. The circuit of claim 10 wherein the feedback circuit includes an operational amplifier for sensing and amplifying the DC signal.

19. The circuit of any claim 10 wherein the feedback circuit includes a resistor chain for generating individual bias voltages of the bias transistors to ensure their generation of the DC signal portions.

20. The circuit of claim 10 wherein the DC signal is a single-ended or differential current.

21. The circuit of claim 10 wherein the DC signal is a single-ended or differential voltage.

22. A transistor biasing circuit for minimizing a signal distortion of a transistor, comprising:

means for generating a direct current (DC) signal proportional to a selected nonlinearity; and

means for applying the DC signal to generate the bias voltage of the transistor at which the selected nonlinearity is zero.

23. The circuit of claim 22 wherein the selected nonlinearity is a second order nonlinearity and the means for generating the DC signal generates first, second and third portions.

24. The circuit of claim 23 wherein the first, second and third portions are combined to form the DC signal.

25. The circuit of claim 22 wherein the selected nonlinearity is a third order nonlinearity and the means for generating the DC signal generates first, second, third and fourth portions.

26. The circuit of claim 25 wherein the first, second, third and fourth portions are combined to form the DC signal.

27. The circuit of any of claim 22, further comprising means for providing a current mirror to bias the means for generating the DC signal.

28. The circuit claim 22, further comprising providing feedback means for sensing the DC signal and for generating the bias voltage at which the DC signal and the selected nonlinearity are zero.

29. The circuit claim 22 wherein the DC signal is a single-ended or differential current.

30. The circuit claim 22 wherein the DC signal is a single-ended or differential voltage.