Transflective liquid crystal display device and method of manufacturing the same

• US 6,532,045 B2
• Filed: 12/21/2000
• Issued: 03/11/2003
• Est. Priority Date: 12/28/1999
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Park, Sang-Chol, Chung, Jae-Young
• Primary Examiner(s): Kim, Robert H.
• Assistant Examiner(s): Duong, Thoi V.
• Application Number:
  US09/741,047
• Publication Number:
  US 20010022634A1
• Time in Patent Office: 810 Days
• Field of Search: 349/113, 349/43, 349/114, 349/110, 349/111
• US Class Current: 349/43
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

An array substrate of the transflective LCD device that includes forming a reflective plate on the substrate at first. An array substrate of transflective LCD device, including: a substrate having switching elements and a pixel region; a reflective plate formed on the substrate and having a light transmitting hole; a first insulating layer formed on the reflective plate while covering the light transmitting hole; a gate electrode formed on the first insulating layer over the reflective plate; a gate insulating layer formed on the first insulating layer while covering the gate electrode; an active layer formed on the gate insulating layer over the gate electrode and having a channel region; an ohmic contact layer formed on the active layer; source and drain electrodes formed on the ohmic contact layer and spaced apart from each other; a second insulating layer formed on the gate insulating layer while covering the source and drain electrode, the second insulating layer having a drain contact hole which exposes the predetermined portion of the drain electrode; and a pixel electrode formed on the second insulating layer and contacting the drain electrode through the drain contact hole.

Claims

1. An array substrate of a transflective liquid crystal display (LCD) device comprising:

a substrate having switching elements and a pixel region;

a reflective plate formed on the substrate and extending to the pixel region, the reflective plate having a light transmitting hole;

a first insulating layer formed on the reflective plate while covering the light transmitting hole;

a gate electrode formed on the first insulating layer over the reflective plate;

a gate insulating layer formed on the first insulating layer while covering the gate electrode;

an active layer formed on the gate insulating layer over the gate electrode and having a channel region;

an ohmic contact layer formed on the active layer;

source and drain electrodes formed on the ohmic contact layer and spaced apart from each other;

a second insulating layer formed on the gate insulating layer while covering the source and drain electrodes, the second insulating layer having a drain contact hole which exposes a predetermined portion of the drain electrode; and

a pixel electrode formed on the second insulating layer and contacting the drain electrode through the drain contact hole.

2. The array substrate of claim 1, wherein the reflective plate is made of an opaque conductive metal.

3. The array substrate of claim 1, wherein the pixel electrode is made of a material selected from the group consisting of Indium-Tin-Oxide (ITO) and Indium-Zinc-Oxide (IZO).

4. The array substrate of claim 1, wherein the active layer is pure amorphous silicon.

5. The array substrate of claim 1, wherein the ohmic contact layer is impurity amorphous silicon.

6. The array substrate of claim 1, wherein the reflective plate comprises aluminum-neodymium (AlNd).

7. The array substrate of claim 1, wherein the light transmitting hole has a substantially rectangular shape.

8. The array substrate of claim 1, wherein the reflective plate does not contact the drain electrode through another contact hole.

9. The array substrate of claim 1, wherein the reflective plate is overlapped by the gate electrode, and an aperture ratio increases in a reflective mode.

10. The array substrate of claim 1, wherein the pixel electrode only directly contacts the drain electrode.

11. A method of forming a method of forming an array substrate for use in a liquid crystal display device, comprising:

providing a substrate having switching elements and a pixel region;

forming a reflective plate formed on the substrate, the reflective plate extending to the pixel region and having a light transmitting hole;

forming a first insulating layer on the reflective plate, the first insulating layer covering the light transmitting hole;

forming a gate electrode on the first insulating layer over the reflective plate;

forming a gate insulating layer on the first insulating layer while covering the gate electrode;

forming an active layer on the gate insulating layer over the gate electrode;

forming an ohmic contact layer on the active layer;

forming source and drain electrodes on the ohmic contact layer, the source and drain electrodes spaced apart from each other;

patterning a portion of the ohmic contact layer between the source and drain electrodes to form a channel region;

forming a second insulating layer on the gate insulating layer to cover the source and drain electrodes, the second insulating layer having a drain contact hole which exposes a predetermined portion of the drain electrode; and

forming a pixel electrode on the second insulating layer, the pixel electrode contacting the drain electrode through the drain contact hole.

12. The method of claim 11, wherein the reflective plate is formed of an opaque conductive material.

13. The method of claim 11, wherein the pixel electrode is formed of a material selected from the group consisting of Indium-Tin-Oxide (ITO) and Indium-Zinc-Oxide (IZO).

14. The method of claim 11, wherein the transmitting hole is located in the pixel region.

15. The method of claim 11, wherein the pixel electrode is formed in the pixel region and covers the transmitting hole.

16. The method of claim 11, wherein the active layer is pure amorphous silicon.

17. The method of claim 11, wherein the ohmic contact layer is impurity amorphous silicon.

18. The method of claim 11, wherein the reflective plate comprises aluminum-neodymium (AlNd).

19. The method of claim 11, wherein the light transmitting hole has a substantially rectangular shape.

20. The method of claim 11, wherein the reflective plate does not contact the drain electrode through another contact hole.

21. The method of claim 11, wherein the reflective plate is overlapped by the gate electrode, and an aperture ratio increases in a reflective mode.

22. The method of claim 11, wherein the pixel electrode only directly contacts the drain electrode.