Magnetic spin polarization and magnetization rotation device with memory and writing process, using such a device

• US 6,532,164 B2
• Filed: 11/23/2001
• Issued: 03/11/2003
• Est. Priority Date: 12/07/2000
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Redon, Olivier, Rodmacq, Bernard, Dieny, Bernard
• Primary Examiner(s): Hoang, Huan
• Application Number:
  US09/990,321
• Publication Number:
  US 20020105823A1
• Time in Patent Office: 473 Days
• Field of Search: 365/171, 365/173, 365/174, 365/97
• US Class Current: 365/97
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H10B 61/20 comprising components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic spin polarizing a magnetization rotation device with a memory and a writing process using such a device. The device is configured to include an apparatus for polarizing the spin of electrons, including a magnetic layer having magnetization perpendicular to the plane of magnetization of respective first and second magnetic layers. The magnetization of the second magnetic layer rotates within a plane, which is either the plane of the layer or a perpendicular plane.

Claims

1. Magnetic device comprising:

a first magnetic layer having a fixed magnetisation direction;

a second magnetic layer having a variable magnetisation direction;

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer;

means for passing a current of electrons through and perpendicular to the first and second magnetic layers; and

means for polarising the spin of the electrons including at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer.

2. Device in accordance with claim 1, wherein

the magnetic polarisation layer has a magnetisation perpendicular to the plane of the first and second magnetic layers, and

wherein the magnetisation of the first and second magnetic layers are located within the plane of the first and second magnetic layers, the spin of the electrons acting on the magnetisation of the second magnetic layer, thereby rotating the magnetisation of the second magnetic layer from a direction perpendicular to the plane of the second magnetic layer within the plane of the second magnetic layer.

3. Device in accordance with claim 2, wherein the magnetic polarisation layer comprises a stack of layers.

4. Device in accordance with claim 3, wherein the stack of layers comprises alternate layers of materials taken from the group consisting of Fe, Pt, Pd, Co, Au, and their alloys.

5. Device in accordance with claim 1, wherein the magnetic polarisation layer is a layer having a magnetisation parallel to the plane of the first and second magnetic layers, and wherein the magnetisation of the first and second magnetic layers is located in a plane perpendicular to the first and second magnetic layers, the spin of the electrodes acting on the second magnetic layer then being polarised parallel to the second layer, thereby causing the magnetisation of the second magnetic layer to rotate in a plane perpendicular to the second magnetic layer.

6. Device in accordance with claim 5, wherein the second magnetic layer exhibits anisotropy in a plane perpendicular to the second magnetic layer.

7. Device in accordance with claim 5, wherein the first magnetic layer is magnetised perpendicularly to the first magnetic layer.

8. Device in accordance with claim 5, wherein the magnetic polarisation layer is made of a material taken from the group consisting of Fe, Ni, Co and their alloys.

9. Device in accordance with claim 5, in which the second magnetic layer comprises plural magnetic layers separated by conducting non-magnetic layers.

10. Memory comprising a matrix of memory cells addressable in rows and columns, wherein each memory cell comprises:

a magnetic device comprising;

a first magnetic layer having a fixed magnetisation direction,

a second magnetic layer having a variable magnetisation direction,

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer,

means for passing a current of electrons through and perpendicular to the first and second magnetic layers,

means for polarising the spin of the electrons including at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer; and

a current switching device connected in series with the magnetic device, each magnetic device being connected to an addressing row and each switching device to an addressing column.

11. Memory in accordance with claim 10, further comprising a reference column and means for comparing the voltage read at the terminals of the magnetic device located at the intersection between a row and a column, and the voltage read at the terminals of the magnetic device located on the same row but in the reference column.

12. Data writing process in a magnetic device, wherein said magnetic device comprises a first magnetic layer having a fixed magnetisation direction, a second magnetic layer having a variable magnetisation direction, an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer, means for passing a current of electrons through and perpendicular to the first and second magnetic layers, and means for polarising the spin of the electrons including at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer, wherein

a current of electrons is passed through the device and perpendicularly to a plane of the first and second magnetic layers, the polarising means polarising the electrons in a direction perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetisation then rotating within the plane of said second magnetic layer, and

the current is cut off when the magnetisation of the second magnetic layer is either parallel or anti-parallel to the magnetisation of the first magnetic layer.

13. Magnetic device comprising:

a first magnetic layer having a fixed magnetisation direction;

a second magnetic layer having a variable magnetisation direction;

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer, and covers an entire surface of the first magnetic layer;

a device configured to pass a current of electrons through and perpendicular to the first and second magnetic layers;

at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer.

14. Magnetic device comprising:

a first magnetic layer having a fixed magnetisation direction;

a second magnetic layer having a variable magnetisation direction;

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer;

a device configured to pass a current of electrons through and perpendicular to the first and second magnetic layers;

at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer,

wherein the magnetic polarisation layer has a magnetisation perpendicular to the plane of the first and second magnetic layers, and

wherein the magnetisation of the first and second magnetic layers are located within the plane of the first and second magnetic layers, the spin of the electrons acting on the magnetisation of the second magnetic layer, thereby rotating the magnetisation of the second magnetic layer from a direction perpendicular to the plane of the second magnetic layer within the plane of the second magnetic layer.

15. Device in accordance with claim 14, wherein the magnetic polarisation layer comprises a stack of layers.

16. Device in accordance with claim 15, wherein the stack of layers comprises alternate layers of materials taken from the group consisting of Fe, Pt, Pd, Co, Au, and their alloys.

17. Magnetic device comprising:

a first magnetic layer having a fixed magnetisation direction;

a second magnetic layer having a variable magnetisation direction;

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer;

a device configured to pass a current of electrons through and perpendicular to the first and second magnetic layers; and

at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer,

wherein the magnetic polarisation layer is a layer having a magnetisation parallel to the plane of the first and second magnetic layers, and wherein the magnetisation of the first and second magnetic layers is located in a plane perpendicular to the first and second magnetic layers, the spin of the electrodes acting on the second magnetic layer then being polarised parallel to the second layer, thereby causing the magnetisation of the second magnetic layer to rotate in a plane perpendicular to the second magnetic layer.

18. Device in accordance with claim 17, wherein the second magnetic layer exhibits anisotropy in a plane perpendicular to the second magnetic layer.

19. Device in accordance with claim 17, wherein the first magnetic layer is magnetised perpendicularly to the first magnetic layer.

20. Device in accordance with claim 17, wherein the magnetic polarisation layer is made of a material taken from the group consisting of Fe, Ni, Co and their alloys.

21. Device in accordance with claim 17, in which the second magnetic layer comprises plural magnetic layers separated by conducting non-magnetic layers.

22. Memory comprising a matrix of memory cells addressable in rows and columns, wherein each memory cell comprises:

a magnetic device comprising;

a first magnetic layer having a fixed magnetisation direction,

a second magnetic layer having a variable magnetisation direction,

an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer,

device configured to pass a current of electrons through and perpendicular to the first and second magnetic layers,

at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer; and

a current switching device connected in series with the magnetic device, each magnetic device being connected to an addressing row and each switching device to an addressing column.

23. Memory in accordance with claim 22, further comprising a reference column and a device configured to compare the voltage read at the terminals of the magnetic device located at the intersection between a row and a column, and the voltage read at the terminals of the magnetic device located on the same row but in the reference column.

24. Data writing process in a magnetic device, wherein said magnetic device comprises a first magnetic layer having a fixed magnetisation direction, a second magnetic layer having a variable magnetisation direction, an insulating or semi-conducting layer which separates the first magnetic layer from the second magnetic layer, a device configured to pass a current of electrons through and perpendicular to the first and second magnetic layers, and at least one magnetic layer having a magnetisation perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetic polarisation layer being separated from the second magnetic layer by a non-magnetic conducting layer, wherein

a current of electrons is passed through the device and perpendicularly to a plane of the first and second magnetic layers, the magnetic polarisation layer polarising the electrons in a direction perpendicular to the plane of the magnetisation of the second magnetic layer, the magnetisation then rotating within the plane of said second magnetic layer,

the current is cut off when the magnetisation of the second magnetic layer is either parallel or anti-parallel to the magnetisation of the first magnetic layer.