Method of producing amorphous silicon for hard mask and waveguide applications

• US 6,533,907 B2
• Filed: 01/19/2001
• Issued: 03/18/2003
• Est. Priority Date: 01/19/2001
• Status: Expired due to Term

• Current Assignee: Demaray LLC
• Original Assignee: Symmorphix, Inc. (Demaray LLC)
• Inventors: Demaray, Richard E., Shan, Jesse, Wang, Kai-An, Mullapudi, Ravi B.
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/766,463
• Publication Number:
  US 20020134671A1
• Time in Patent Office: 788 Days
• Field of Search: 204/192.12, 204/192.23, 204/192.25, 216/51, 216/24, 216/39
• US Class Current: 204/192.25
• CPC Class Codes: C23C 14/14 Metallic material, boron or silicon
• CPC Class Codes: C23C 14/3414 Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3444 Associated circuits

Abstract

A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semiconductor devices and as a high refractive index material in optical devices. DC sputtering of a planar target of intrinsic crystalline semiconducting material in the presence of a sputtering gas under a condition of uniform target erosion is used to deposit amorphous semiconducting material on a substrate. DC power that is modulated by AC power is applied to the target. The process provides dense, smooth amorphous silicon at high deposition rates. A method of patterning a material layer including forming a hard mask layer of amorphous silicon on a material layer according to the present DC sputtering process is also provided. The low average surface roughness of the amorphous silicon hard mask is reflected in the low average surface roughness of the sidewalls of the etched material layer. In addition, a method of forming optical devices in which the DC sputtered amorphous semiconductor materials are used as the high refractive index material is provided.

Claims

1. A method of forming a layer of an amorphous semiconducting material on a substrate, the method comprising:

positioning a substrate opposite a planar target comprising an intrinsic crystalline semiconducting material;

applying DC power to the target in the presence of a gas, under a condition wherein the DC power is modulated by AC power, and under a condition of uniform target erosion, whereby a layer of amorphous semiconducting material is formed on the substrate; and

applying AC power to the substrate.

2. A method of forming a layer of an amorphous semiconducting material on a substrate, the method comprising:

positioning a substrate opposite a planar target comprising an intrinsic crystalline semiconducting material;

applying DC power to the target in the presence of a gas, under a condition wherein the DC power is modulated by AC power, and under a condition of uniform target erosion, whereby a layer of amorphous semiconducting material is formed on the substrate; and

wherein the area of the planar target is at least 1.5 times greater than the area of the substrate.

3. A method of forming a layer of an amorphous silicon on a substrate, the method comprising:

positioning a substrate opposite a planar target comprising intrinsic crystalline silicon; and

applying DC power to the target in the presence of a gas, under a condition wherein the DC power is modulated by AC power, and in the presence of a time-averaged uniform magnetic field created by a moving magnetron source, whereby a layer of amorphous silicon material is formed on the substrate,

wherein the target is composed of tiles positioned with a uniform crystal orientation.

4. A method of forming an optical device comprising:

forming a layer of amorphous silicon on a first layer of material, the first layer having an index of refraction less than the index of refraction of the amorphous silicon material, the process of forming the layer of amorphous silicon comprising;

positioning the first layer opposite a planar target comprising intrinsic crystalline silicon; and

applying DC power to the target in the presence of a gas, under a condition wherein the DC power is modulated by AC power, and under a condition of uniform target erosion, whereby a layer of amorphous silicon is formed on the first layer;

forming a top layer of a material having a lower index of refraction than the index of refraction of the amorphous silicon on top of the layer of amorphous silicon; and

patterning the top layer and partway through the thickness of the amorphous silicon to form the optical device.