Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof

• US 6,533,910 B2
• Filed: 12/29/2000
• Issued: 03/18/2003
• Est. Priority Date: 12/29/2000
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Chang, Christopher C., Daugherty, John E., OʼDonnell, Robert J.
• Primary Examiner(s): Ryan, Patrick
• Assistant Examiner(s): Cantelmo, Gregg
• Application Number:
  US09/750,251
• Publication Number:
  US 20020094378A1
• Time in Patent Office: 809 Days
• Field of Search: 204/298.31, 204/298.11, 204/298.21, 204/192.15, 204/192.16, 156/345, 118/715, 427/255.391, 501/96.1
• US Class Current: 204/298.31
• CPC Class Codes: B01J 19/02 Apparatus characterised by being constructed of material selected for its chemically-resistant properties
• CPC Class Codes: B01J 2219/00171 controlling the density
• CPC Class Codes: B01J 2219/0218 of ceramic
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings

Abstract

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a carbonitride containing surface and process for manufacture thereof.

Claims

1. A process for coating a chamber wall of a plasma etching chamber, the process comprising:

(a) optionally depositing a first intermediate coating on said chamber wall;

(b) optionally depositing a second intermediate coating on said first intermediate coating or on said chamber wall; and

(c) depositing a carbonitride containing coating on said chamber wall to form an outer erosion resistant surface, said carbonitride containing coating comprising a compound containing at least one element selected from a Group IIB, IIIB, IVB, VB, VIB or VIIB element of the Periodic Table.

2. The process for coating according to claim 1, wherein said chamber wall comprises a metal, ceramic or polymer surface.

3. The process for coating according to claim 2, wherein said first intermediate coating is not optional.

4. The process for coating according to claim 3, wherein said first intermediate coating comprises a metal, ceramic or polymer coating.

5. The process for coating according to claim 1, further comprising forming a roughened surface on said chamber wall, said roughened surface being effective to promote adhesion of the carbonitride containing coating.

6. The process for coating according to claim 1, wherein said carbonitride containing coating is deposited to a thickness ranging from 0.001 to about 0.050 inches.

7. The process for coating according to claim 1, wherein said carbonitride containing coating is deposited by chemical vapor deposition, plasma spray coating, sublimation, laser vaporization, sputtering, sputtering deposition, ion beam coating, spray coating, dip coating, evaporation coating, roll-on coating or brush coating.

8. A process for coating a chamber wall of a plasma etching chamber, the process comprising:

(a) optionally depositing a first intermediate coating on said chamber wall;

(b) optionally depositing a second intermediate coating on said first intermediate coating or on said chamber wall; and

(c) depositing a carbonitride containing coating on said chamber wall to form an outer erosion resistant surface, the carbonitride in said carbonitride containing coating comprising boron carbonitride, zirconium carbonitride or titanium carbonitride.

9. The process for coating according to claim 8, wherein said carbonitride in said carbonitride containing coating comprises titanium carbonitride.

10. The process for coating according to claim 8, wherein said carbonitride in said carbonitride containing coating comprises silicon carbonitride.

11. A chamber wall of a plasma etching chamber comprising:

an optional first intermediate coating on said chamber wall;

an optional second intermediate coating on said first intermediate coating or on said chamber wall; and

a carbonitride containing coating on said chamber wall that forms an outer corrosion resistant surface, said carbonitride containing coating comprising a compound containing at least one element selected from a Group IIB, IIIB, IVB, VB, VIB or VIIB element of the Periodic Table.

12. The component according to claim 11, wherein said chamber wall comprises a metal, ceramic or polymer surface.

13. The component according to claim 11, wherein said first intermediate coating is not optional.

14. The component according to claim 11, wherein said carbonitride containing coating has a thickness ranging from 0.001 to about 0.050 inches.

15. The component according to claim 11, further comprising one or more additional carbonitride containing or intermediate coatings.

16. The component according to claim 11, wherein said carbonitride forms a continuous matrix phase in said carbonitride containing coating.

17. A chamber wall of a plasma etching chamber comprising:

an optional first intermediate coating on said chamber wall;

an optional second intermediate coating on said first intermediate coating or on said chamber wall; and

a carbonitride containing coating on said chamber wall that forms an outer corrosion resistant surface, said carbonitride in said carbonitride containing coating comprising boron carbonitride, zirconium carbonitride, titanium carbonitride, or mixtures thereof.

18. The component according to claim 17, wherein said carbonitride in said carbonitride containing coating comprises boron carbonitride, and said boron carbonitride is in a composite with boron nitride or boron carbide.

19. The component according to claim 17, wherein said carbonitride in said carbonitride containing coating comprises titanium carbonitride.

20. The component according to claim 17, wherein said carbonitride in said carbonitride containing coating comprises silicon carbonitride.

21. A chamber wall of a plasma etching chamber having at least one surface exposed to plasma in the chamber, the chamber wall comprising a carbonitride containing material forming a surface exposed to plasma in the chamber, the carbonitride containing material comprising a compound containing at least one element selected from a Group IIB, IIIB, IVB, VB, VIB or VIIB element of the Periodic Table.