Microneedle structure and production method therefor

• US 6,533,949 B1
• Filed: 10/02/2000
• Issued: 03/18/2003
• Est. Priority Date: 08/28/2000
• Status: Expired due to Term

• Current Assignee: Nanopass Limited
• Original Assignee: Nanopass Limited
• Inventors: Yeshurun, Yehoshua, Hefetz, Meir, Berenschot, J. W., Gardeniers, J. G. E., de Boer, Meint
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US09/677,175
• Time in Patent Office: 897 Days
• Field of Search: 216/2, 216/11, 216/39, 216/57, 216/67, 216/99, 604/264, 604/273
• US Class Current: 216/11
• CPC Class Codes: A61M 2037/003 having a lumen
• CPC Class Codes: A61M 2037/0053 Methods for producing microneedles
• CPC Class Codes: A61M 37/0015 by using microneedles
• CPC Class Codes: B81B 2203/0361 Tips, pillars
• CPC Class Codes: B81C 1/005 Bulk micromachining

Abstract

A method for processing a wafer to form a plurality of hollow microneedles projecting from a substrate includes forming, by use of a dry etching process, a number of groups of recessed features, each including at least one slot deployed to form an open shape having an included area and at least one hole located within the included area. The internal surfaces of the holes and the slots are then coated with a protective layer. An anisotropic wet etching process is then performed in such a manner as to remove material from outside the included areas while leaving a projecting feature within each of the included areas. The protective layer is then removed to reveal the microneedles.

Claims

1. A method for processing a wafer to form a plurality of hollow microneedles projecting from a substrate, the method comprising the steps of:

(a) forming by use of a dry etching process a plurality of groups of recessed features, each group of recessed features including at least one slot deployed to form an open shape having an included area and at least one hole located within said included area;

(b) coating internal surfaces of said holes and said slots with a protective layer;

(c) performing an anisotropic wet etching process in such a manner as to remove material from outside said included areas while leaving a projecting feature within each of said included areas; and

(d) removing said protective layer.

2. The method of claim 1, wherein said open shape is substantially a V-shape formed from two substantially straight slots.

3. The method of claim 2, wherein said V-shape is modified by a minimum radius of curvature at the intersection of said two substantially straight slots.

4. The method of claim 2, wherein said two substantially straight slots subtend an angle of between about 60°

and about 120°

therebetween.

5. The method of claim 2, wherein said two substantially straight slots subtend an angle of between about 85°

and about 95°

therebetween.

6. The method of claim 1, wherein said dry etching process employs deep reactive ion etching.

7. The method of claim 1, wherein said dry etching process includes cryogenic dry etching.

8. The method of claim 1, wherein a minimum transverse dimension of said hole is greater than a minimum transverse dimension of said slots such that said hole extends to a depth greater than said slots.

9. The method of claim 8, further comprising forming a plurality of connecting holes penetrating into a face of said wafer opposite to said projections such that said each of said connecting holes interconnects with a corresponding one of said holes to form a through channel for fluid flow.

10. The method of claim 1, wherein said wet etching process employs a solution containing potassium hydroxide.

11. The method of claim 1, wherein said wet etching process is performed in such a manner as to selectively remove material from within said included areas such that each of said projecting features exhibits an inclined upper surface sloping upward from said substrate.