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Methodology for in-situ doping of aluminum coatings

  • US 6,534,133 B1
  • Filed: 06/30/2000
  • Issued: 03/18/2003
  • Est. Priority Date: 06/14/1996
  • Status: Expired due to Term
First Claim
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1. A chemical vapor deposition process for the in-situ preparation of conformal copper-doped aluminum coatings on a substrate in a chemical vapor deposition (CVD) reactor comprising:

  • a. generating a first flow of a first reactant vapor directed to said substrate in said reactor, said first reactant vapor comprising a copper source precursor;

    b. heating said substrate to a temperature sufficient to decompose said first reactant vapor and form, directly on a surface of the substrate, a copper layer having a thickness of less than 10 nm;

    c. generating a second flow of a second reactant vapor directed to said substrate in said reactor, said second reactant vapor consisting of an aluminum source precursor, and optionally, a carrier gas;

    d. heating said substrate to a temperature higher than 185°

    C. to decompose said second reactant vapor and form a copper-doped aluminum film.

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