Process for producing semiconductor article

• US 6,534,382 B1
• Filed: 08/08/2000
• Issued: 03/18/2003
• Est. Priority Date: 12/18/1996
• Status: Expired due to Term

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Yonehara, Takao, Yamagata, Kenji, Nishida, Shoji
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): TOLEDO, FERNANDO L
• Application Number:
  US09/634,542
• Time in Patent Office: 952 Days
• Field of Search: 438/457, 438/459, 438/455, 438/149, 438/406, 438/479, 438/408, 438/409, 438/974, 438/977, 156/630
• US Class Current: 438/455
• CPC Class Codes: B28D 5/00 Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor working by grinding or polishing B24; for artistic purposes B44B
• CPC Class Codes: G02F 1/136277 formed on a semiconductor substrate, e.g. of silicon
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 22/00 Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

Claims

1. A method for forming a semiconductor thin film which comprises steps of:

implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer,

bonding a film on a surface side of the semiconductor substrate, and

separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force, and warping the semiconductor substrate or the film bonded on the semiconductor substrate such that a crack forms and extends from a flank side of the semiconductor substrate.

2. The method according to claim 1, which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed.

3. The method according to claim 1, which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed.

4. The method for forming a semiconductor thin film according to claim 1, wherein said semiconductor substrate is a non-porous semi-conductor substrate.

5. A method for forming a semiconductor thin film which comprises steps of:

implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer,

separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force and warping the semiconductor substrate such that crack forms and extends from a flank side of the semiconductor substrate.

6. The method according to claim 5, which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed.

7. The method according to claim 5, which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed.

8. The method for forming a semiconductor thin film according to claim 5, wherein said semiconductor substrate is a non-porous semiconductor substrate.