Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch
First Claim
1. A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip, comprising the steps of:
- (a) adjusting the temperature of the chip using a reaction chamber, as necessary, to a temperature appropriate for the beta-diketone employed in step (c) and the design of the micromechanical and microelectronic devices;
(b) cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water;
(c) introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched;
(d) flowing the reactive mixture over the substrate until any sacrificial materials and metal contamination have been substantially removed;
(e) stopping the flow of the reactive mixture; and
(f) cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products.
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Accused Products
Abstract
A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.
21 Citations
17 Claims
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1. A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip, comprising the steps of:
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(a) adjusting the temperature of the chip using a reaction chamber, as necessary, to a temperature appropriate for the beta-diketone employed in step (c) and the design of the micromechanical and microelectronic devices;
(b) cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water;
(c) introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched;
(d) flowing the reactive mixture over the substrate until any sacrificial materials and metal contamination have been substantially removed;
(e) stopping the flow of the reactive mixture; and
(f) cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. In a process for the fabrication of a micro-electromechanical system which includes the step of providing a sacrificial layer of silicon oxide on a silicon surface, subsequently removing the sacrificial layer of silicon oxide and the removing of any metal contaminants from said silicon surface, the improvement which comprises:
effecting the simultaneous removal of said sacrificial layer of silicon oxide on said silicon surface and said removal of metal contaminates by contacting said silicon surface with a mixture of HF and a beta-diketone whereby said sacrificial layer is removed during the fabrication of said micro-electromechanical system. - View Dependent Claims (17)
Specification