Surface plasmon enhanced light emitting diode and method of operation for the same

• US 6,534,798 B1
• Filed: 09/06/2000
• Issued: 03/18/2003
• Est. Priority Date: 09/08/1999
• Status: Expired due to Fees

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Vuckovic, Jelena, Loncar, Marko, Scherer, Axel
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/656,323
• Time in Patent Office: 923 Days
• Field of Search: 257/95, 257/98, 257/99, 257/103, 372/49, 372/50, 372/99, 372/102
• US Class Current: 257/98
• CPC Class Codes: H01L 33/0004 Devices characterised by their operation
• CPC Class Codes: H01L 33/465 with a resonant cavity structure

Abstract

The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than λ/2 and is sandwiched between two metal films. A periodic pattern is defined in the top semitransparent metal layer by lithography with the result that it efficiently couples out the light emitted from the semiconductor and simultaneously enhances the spontaneous emission rate. Extraction efficiencies of up to 35% and Purcell factors of up to 4.5 are obtainable. Photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers are obtained. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.

Claims

1. An improvement in a light emitting diode comprising:

an active light emitting semiconductor layer having a first and second parallel surface;

an optically reflecting layer disposed on said first surface of said semiconductor layer; and

an optically reflecting grating disposed on said second surface of said active light emitting semiconductor layer, said grating having a pattern which is selected so that surface plasmon waves are coupled through said grating.

2. The improvement of claim 1 wherein said grating has a regular periodic structure.

3. The improvement of claim 2 where said grating has a one dimensionally periodic structure.

4. The improvement of claim 2 where said grating has a two dimensionally periodic structure.

5. The improvement of claim 1 where said optically reflecting grating is partially transparent.

6. The improvement of claim 1 where optically reflecting layer disposed on said first surface is a conductive layer.

7. The improvement of claim 1 where optically reflecting grating disposed on said second surface is a conductive layer.

8. The improvement of claim 1 where said active light emitting semiconductor layer comprises a semiconductor membrane.

9. The improvement of claim 1 where said active light emitting semiconductor layer comprises a layer including a quantum well.

10. The improvement of claim 1 where said grating has a selected pattern which is characterized by its coupling to surface plasmons generated by said light emitting semiconductor layer.

11. The improvement of claim 1 where said light emitting semiconductor layer in combination with said an optically reflecting layer and said an optically reflecting grating comprise a microcavity, said grating characterized by a pattern which couples with surface plasmons in said microcavity.

12. An improved light emitting diode comprising:

an active light emitting semiconductor layer having a first and second parallel and opposing surface;

an conductive layer disposed on said first surface of said semiconductor layer; and

an conductive grating disposed on said second surface of said active light emitting semiconductor layer, said conductive layer and conductive grating with said semiconductor layer therebetween defining a cavity, said grating having a pattern which is selected so that surface plasmon waves within said cavity are coupled through said grating.

13. The light emitting diode of claim 12 wherein said grating has a regular periodic structure.

14. The light emitting diode of claim 13 where said grating has a one dimensionally periodic structure.

15. The light emitting diode of claim 13 where said grating has a two dimensionally periodic structure.

16. The light emitting diode of claim 12 where said grating is partially transparent.

17. A method of improving emission from a light emitting diode comprising:

providing an active light emitting semiconductor layer having a first and second parallel surface;

providing an optically reflecting layer disposed on said first surface of said semiconductor layer;

providing an optically reflecting grating with a selected pattern defined therein, said grating being disposed on said second surface of said active light emitting semiconductor layer; and

coupling surface plasmon waves through said optically reflecting grating, said selected pattern characterized by said surface plasmon waves being coupled therethrough.

18. The method of claim 17 where providing an optically reflecting grating with a selected pattern defined therein provides said grating with a periodic pattern.

19. The method of claim 18 where providing a periodic pattern defined in said grating provides a one dimensional periodic pattern.

20. The method of claim 18 where providing a periodic pattern defined in said grating provides a two dimensional periodic pattern.