Low impedance VDMOS semiconductor component

• US 6,534,830 B2
• Filed: 11/13/2001
• Issued: 03/18/2003
• Est. Priority Date: 05/12/1999
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werner, Wolfgang, Tihanyi, Jenoe
• Primary Examiner(s): Eckert, George
• Assistant Examiner(s): Ortiz, Edgardo
• Application Number:
  US10/011,131
• Publication Number:
  US 20020079535A1
• Time in Patent Office: 490 Days
• Field of Search: 257/330, 257/329, 257/332, 257/328, 257/374, 257/341, 257/343, 257/342, 438/270, 438/271
• US Class Current: 257/343
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7396 with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions H01L29/7398 takes precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors

Abstract

A low impedance VDMOS semiconductor component having a planar gate structure is described. The VDMOS semiconductor component contains a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substantially opposite to one another. A highly doped first zone of the first conductivity type is disposed in an area of the first main surface. A second zone of a second conductivity type separates the first zone from the semiconductor body. The first zone and the second zone have a trench with a bottom formed therein reaching down to the semiconductor body. An insulating material fills the trench at least beyond an edge of the second zone facing the semiconductor body. A region of the second conductivity type surrounds an area of the bottom of the trench.

Claims

1. A low impedance VDMOS semiconductor component having a planar gate structure, comprising:

a semiconductor body of a first conductivity type having two main surfaces, including a first main surface and a second main surface disposed substantially opposite to one another;

a highly doped first zone of the first conductivity type disposed in an area of said first main surface;

a second zone of a second conductivity type separating said first zone from said semiconductor body, said first zone and said second zone having a trench with a bottom formed therein reaching down to said semiconductor body;

an insulating material filling said trench at least beyond an edge of said second zone facing said semiconductor body; and

a region of the second conductivity type surrounding an area of said bottom of said trench.

2. The low impedance VDMOS semiconductor component according to claim 1, wherein said region of the second conductivity type reaches up to said second zone and said trench is filled with said insulating material at least up to said edge of said second zone facing said first main surface.

3. The low impedance VDMOS semiconductor component according to claim 1, including at least one further region of the second conductivity type disposed in said semiconductor body below said region of the second conductivity type.

4. The low impedance VDMOS semiconductor component according to claim 1, wherein said trench is completely filled with said insulating material.

5. The low impedance VDMOS semiconductor component according to claim 1, wherein said insulating material is glass.

6. The low impedance VDMOS semiconductor component according to claim 1, wherein said semiconductor body has an epitaxy layer disposed adjacent to said first main surface and further epitaxy layers lying below said epitaxy layer, said epitaxy layer being doped higher than said further epitaxy layers.

7. The low impedance VDMOS semiconductor component according to claim 1, wherein said region of the second conductivity type is doped with boron.