Assembly and methods for packaged die on pcb with heat sink encapsulant

• US 6,534,858 B2
• Filed: 04/16/2001
• Issued: 03/18/2003
• Est. Priority Date: 05/24/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Wark, James M., Akram, Salman
• Primary Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US09/835,541
• Publication Number:
  US 20010015492A1
• Time in Patent Office: 701 Days
• Field of Search: 257/706, 257/787, 257/778, 257/690, 257/687, 257/712, 257/788, 257/796, 438/112, 438/124, 438/127, 438/15, 438/25, 438/26, 438/122, 438/125, 438/126
• US Class Current: 257/706
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/484 Connecting portions
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73203 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 2224/78 Apparatus for connecting with wire connectors
• CPC Class Codes: H01L 2224/81 using a bump connector
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/83951 Forming additional members, e.g. for reinforcing, fillet sealant
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85203 : Thermocompression bonding
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85207 : Thermosonic bonding
• CPC Class Codes: H01L 2224/85399 : Material
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3121 : a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/3157 : Partial encapsulation or coating mask layer used as insulation layer H01L21/31
• CPC Class Codes: H01L 23/42 : Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
• CPC Class Codes: H01L 23/4334 : Auxiliary members in encapsulations H01L23/49568 takes precedence
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

An apparatus and a method for providing a heat sink on an upper surface of a semiconductor chip by placing a heat-dissipating material thereon which forms a portion of a glob top. The apparatus comprises a semiconductor chip attached to and in electrical communication with a substrate. A barrier glob top material is applied to the edges of the semiconductor chip on the surface (“opposing surface”) opposite the surface attached to the substrate to form a wall around a periphery of an opposing surface of the semiconductor chip wherein the barrier glob top material also extends to contact and adhere to the substrate. The wall around the periphery of the opposing surface of the semiconductor chip forms a recess. A heat-dissipating glob top material is disposed within the recess to contact the opposing surface for the semiconductor chip.

Claims

1. A semiconductor assembly comprising:

a substrate;

a semiconductor chip having a first surface and a second surface, at least a portion of the first surface attached to a portion of said substrate and electrically connected to a portion of said substrate;

a barrier material adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, said barrier material substantially contacting a portion of said substrate;

a recess defined by said wall about said periphery of the semiconductor chip second surface; and

a heat-dissipating material disposed within said recess.

2. The semiconductor assembly of claim 1, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

3. The semiconductor assembly of claim 1, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said semiconductor chip second surface and a respective electrical contact point on said substrate.

4. The semiconductor assembly of claim 1, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

5. The semiconductor assembly of claim 1, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

6. The semiconductor assembly of claim 3, wherein said barrier material substantially encapsulates said at least one bond wire.

7. The semiconductor assembly of claim 4, wherein said barrier material substantially encapsulates said at least one tape automated bond.

8. The semiconductor assembly of claim 7, further comprising an underfill encapsulant disposed between said semiconductor chip and said substrate.

9. A method of making a semiconductor assembly comprising:

providing a substrate;

providing a semiconductor chip having a first surface and a second surface;

attaching at least a portion of said semiconductor chip first surface to at least a portion of said substrate;

forming an electrical connection between said semiconductor chip and said substrate;

forming a wall substantially around a periphery of the second surface of said semiconductor chip using a barrier material, said wall around the periphery of said second surface of said semiconductor chip defining a recess;

extending said barrier material for contacting said substrate; and

disposing a heat-dissipating material substantially within said recess.

10. The method of claim 9, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

11. The method of claim 9, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one bond wire between at least one electrical contact point on said semiconductor chip second surface and a respective electrical contact point on said substrate.

12. The method of claim 9, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

13. The method of claim 9, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one conductive bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

14. The method of claim 11, wherein said barrier material substantially encapsulates said at least one bond wire.

15. The method of claim 12, wherein the barrier material substantially encapsulates said at least one tape automated bond.

16. The method of claim 13, further comprising an underfill encapsulant substantially disposed between said semiconductor chip and said substrate.

17. A semiconductor assembly comprising:

a semiconductor chip having a first surface and a second surface, the first surface attached to at least a portion of a substrate and electrically connected to a portion of the substrate;

a barrier material adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, a portion of said wall extending beyond said semiconductor chip forming a recess located above said second surface of said semiconductor chip, said barrier material substantially extending to and contacting portions of said substrate; and

a heat-dissipating material disposed within said recess.

18. The semiconductor assembly of claim 17, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

19. The semiconductor assembly of claim 17, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

20. The semiconductor assembly of claim 17, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

21. The semiconductor assembly of claim 20, wherein said barrier material substantially encapsulates said at least one tape automated bond.

22. The semiconductor assembly of claim 17, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

23. The semiconductor assembly of claim 19, wherein said barrier material substantially encapsulates said at least one bond wire.

24. The semiconductor assembly of claim 22, further comprising an underfill encapsulant substantially disposed between said semiconductor chip and said substrate.

25. A method for making a semiconductor assembly comprising:

providing a substrate;

providing a semiconductor chip having a first surface and a second surface;

attaching at least a portion of said first surface of said semiconductor chip to at least a portion of said substrate;

disposing an underfill material substantially between said substrate and said semiconductor chip;

forming an electrical connection between said semiconductor chip and said substrate;

forming a wall substantially around a periphery of said second surface of said semiconductor chip using a barrier material, said wall and said second surface of said semiconductor chip defining a recess;

extending said barrier material to contact at least a portion of said substrate; and

disposing a heat-dissipating material substantially within said recess.

26. The method of claim 25, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

27. The method of claim 25, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one bond wire between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

28. The method of claim 25, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

29. The method of claim 25, wherein the electrical connection between said semiconductor chip and said substrate comprises attaching at least one conductive bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

30. The method of claim 27, wherein said barrier material substantially encapsulates said at least one bond wire.

31. The method of claim 28, wherein the barrier material substantially encapsulates said at least one tape automated bond.

32. A semiconductor assembly comprising:

a substrate;

a semiconductor chip having a first surface and a second surface, a portion of said first surface attached to and electrically connected to said substrate;

an underfill material substantially filling a space between said substrate and said semiconductor chip;

a barrier material substantially adhered to a periphery of the second surface of said semiconductor chip substantially forming a wall, a portion of said wall extending beyond the said semiconductor chip forming a recess located above said second surface of said semiconductor chip, said barrier material substantially extending to and contacting said substrate; and

a heat-dissipating material disposed within said recess.

33. The semiconductor assembly of claim 32, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

34. The semiconductor assembly of claim 32 , wherein the electrical connection between said semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

35. The semiconductor assembly of claim 32, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

36. The semiconductor assembly of claim 32, wherein the electrical connection between said semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

37. The semiconductor assembly of claim 34, wherein said barrier material substantially encapsulates said at least one bond wire.

38. The semiconductor assembly of claim 35, wherein said barrier material substantially encapsulates said at least one tape automated bond.

39. A semiconductor assembly comprising:

a substrate;

at least one semiconductor chip having a first surface and a second surface, the first surface attached to and electrically connected to said substrate;

a barrier material adhered to a periphery of the second surface of said at least one semiconductor chip substantially forming a wall, said barrier material substantially extending to and contacting a portion of said substrate;

a recess defined by said wall about said periphery of the second surface of the at least one semiconductor chip; and

a heat-dissipating material disposed within said recess.

40. The semiconductor assembly of claim 39, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

41. The semiconductor assembly of claim 39, wherein the electrical connection between said at least one semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said at least one second surface of said semiconductor chip and a respective electrical contact point on said substrate.

42. The semiconductor assembly of claim 39, wherein the electrical connection between said at least one semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said second surface of said semiconductor chip and a respective electrical contact point on said substrate.

43. The semiconductor assembly of claim 39, wherein the electrical connection between at least one said semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said at least one semiconductor chip and a respective electrical contact point on said substrate.

44. The semiconductor assembly of claim 41, wherein said barrier material substantially encapsulates said at least one bond wire.

45. The semiconductor assembly of claim 42, wherein said barrier material substantially encapsulates said at least one tape automated bond.

46. The semiconductor assembly of claim 43, further comprising an underfill encapsulant disposed between said at least one semiconductor chip and said substrate.

47. A semiconductor assembly comprising:

a substrate;

at least two semiconductor chips, each semiconductor chip of said at least two semiconductor chips having a first surface and a second surface, the first surface of said each semiconductor chip attached to and electrically connected to said substrate;

a barrier material adhered to a periphery of the second surface of said each semiconductor chip substantially forming a wall, said barrier material substantially extending to and contacting a portion of said substrate;

a recess defined by said wall; and

a heat-dissipating material disposed within said recess of said each semiconductor chip.

48. The semiconductor assembly of claim 47, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

49. The semiconductor assembly of claim 47, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

50. The semiconductor assembly of claim 47, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said each semiconductor chip said second surface and a respective electrical contact point on said substrate.

51. The semiconductor assembly of claim 47, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

52. The semiconductor assembly of claim 49, wherein said barrier material substantially encapsulates said at least one bond wire.

53. The semiconductor assembly of claim 50, wherein said barrier material substantially encapsulates said at least one tape automated bond.

54. The semiconductor assembly of claim 53, further comprising an underfill encapsulant disposed between said each semiconductor chip and said substrate.

55. A semiconductor assembly comprising:

a substrate;

a plurality of semiconductor chips, each semiconductor chip of said plurality having a first surface and a second surface, the first surface attached to and electrically connected to said substrate;

a barrier material adhered to a periphery of the second surface of said each semiconductor chip substantially forming a wall, said barrier material substantially extending to and contacting a portion of said substrate;

a recess defined by said wall; and

a heat-dissipating material disposed within said recess of said each semiconductor chip.

56. The semiconductor assembly of claim 55, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

57. The semiconductor assembly of claim 55, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one bond wire between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

58. The semiconductor assembly of claim 55, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one tape automated bond between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

59. The semiconductor assembly of claim 55, wherein the electrical connection between said each semiconductor chip and said substrate comprises at least one conductive bond between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

60. The semiconductor assembly of claim 57, wherein said barrier material substantially encapsulates said at least one bond wire.

61. The semiconductor assembly of claim 58, wherein said barrier material substantially encapsulates said at least one tape automated bond.

62. The semiconductor assembly of claim 59, further comprising an underfill encapsulant disposed between said each semiconductor chip and said substrate.

63. A method of making a semiconductor assembly comprising:

providing a substrate;

providing a plurality of semiconductor chips, each semiconductor chip of said plurality having a first surface and a second surface;

attaching a portion of said first surface of said each semiconductor chip to a portion of said substrate;

disposing an underfill material substantially between said substrate and said each semiconductor chip;

forming an electrical connection between said each semiconductor chip and said substrate;

forming a wall substantially around a periphery of second surface of said each semiconductor chip using a barrier material, said wall and said second surface of said each semiconductor chip defining a recess;

extending said barrier material for contacting and adhering to said substrate; and

disposing a heat-dissipating material substantially within said recess.

64. The method of claim 63, wherein said heat-dissipating material has a higher thermal conductivity than the barrier material.

65. The method of claim 63, wherein the electrical connection between said each semiconductor chip and said substrate comprises attaching at least one bond wire between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

66. The method of claim 63, wherein the electrical connection between said each semiconductor chip and said substrate comprises attaching at least one tape automated bond between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

67. The semiconductor assembly of claim 63, wherein the electrical connection between said each semiconductor chip and said substrate comprises attaching at least one conductive bond between at least one electrical contact point on said second surface of said each semiconductor chip and a respective electrical contact point on said substrate.

68. The method of claim 65, wherein said barrier material substantially encapsulates said at least one bond wire.

69. The semiconductor assembly of claim 66, wherein the barrier material substantially encapsulates said at least one tape automated bond.