Piezoresonator
First Claim
Patent Images
1. A thin film piezoresonator, comprising:
- a first electrode layer;
a second electrode layer;
a third electrode layer;
a piezo layer disposed between said first and second electrode layers;
an electroactive layer disposed between said second and third electrode layers;
said second and third electrode layers and said electroactive layer defining a layer stack, a layer plane, and a vertical direction along a line substantially perpendicular to said layer plane;
said electroactive layer being formed of a material contracting said electroactive layer in said vertical direction when a D.C. voltage is applied between said second electrode layer and said third electrode layer to change a resonance frequency of said layer stack for tuning the piezoresonator; and
a series of layers formed alternately of a material of low acoustic impedance and a material of high acoustic impedance, said piezo layer and said electroactive layer disposed on said series of layers.
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Abstract
A thin film piezoresonator, which can be tuned over a wide range of RF frequencies, includes a piezo layer between a first electrode layer and a second electrode layer. An electroactive layer of an electrostrictive material, which experiences a mechanical deformation when an electrical voltage is applied, is disposed between a third electrode layer and the second electrode layer.
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Citations
14 Claims
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1. A thin film piezoresonator, comprising:
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a first electrode layer;
a second electrode layer;
a third electrode layer;
a piezo layer disposed between said first and second electrode layers;
an electroactive layer disposed between said second and third electrode layers;
said second and third electrode layers and said electroactive layer defining a layer stack, a layer plane, and a vertical direction along a line substantially perpendicular to said layer plane;
said electroactive layer being formed of a material contracting said electroactive layer in said vertical direction when a D.C. voltage is applied between said second electrode layer and said third electrode layer to change a resonance frequency of said layer stack for tuning the piezoresonator; and
a series of layers formed alternately of a material of low acoustic impedance and a material of high acoustic impedance, said piezo layer and said electroactive layer disposed on said series of layers. - View Dependent Claims (2, 3, 4, 5)
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6. A thin film piezoresonator, comprising:
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a first electrode layer;
a second electrode layer;
a third electrode layer;
a piezo layer disposed between said first and second electrode layers;
an at least predominantly electrostrictive electro-active material layer disposed between said second and third electrode layers;
said second and third electrode layers and said at least predominantly electrostrictive electro-active material layer defining a layer stack, a layer plane, and a vertical direction along a line substantially perpendicular to said layer plane; and
said at least predominantly electrostrictive electro-active material layer being formed of a material contracting said at least predominantly electrostrictive electro-active material layer in said vertical direction when a D.C. voltage is applied between said second electrode layer and said third electrode layer to change a resonance frequency of said layer stack for tuning the piezoresonator. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A thin film piezoresonator, comprising:
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a first electrode layer;
a second electrode layer;
a third electrode layer;
a piezo layer disposed between said first and second electrode layers;
an electroactive layer being formed of lead magnesium niobate disposed between said second and third electrode layers;
said second and third electrode layers and said electroactive layer defining a layer stack, a layer plane, and a vertical direction along a line substantially perpendicular to said layer plane; and
said electroactive layer being formed of a material contracting said electroactive layer in said vertical direction when a D.C. voltage is applied between said second electrode layer and said third electrode layer to change a resonance frequency of said layer stack for tuning the piezoresonator. - View Dependent Claims (13, 14)
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Specification