Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system

• US 6,534,921 B1
• Filed: 11/09/2000
• Issued: 03/18/2003
• Est. Priority Date: 11/09/2000
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Seo, Sang-Hun, Chung, Seung-Pil, Chi, Kyeong-Koo, Kim, Ji-Soo, Chu, Chang-Woong
• Primary Examiner(s): Wong, Don
• Assistant Examiner(s): VO, TUYET THI
• Application Number:
  US09/708,737
• Time in Patent Office: 859 Days
• Field of Search: 315/111.51, 315/111.11, 315/111.21, 315/111.41, 315/111.81, 315/111.91, 134/1.1, 134/1.2, 134/1.3, 134/21, 134/21.1, 134/21.18, 134/21.19
• US Class Current: 315/111.51
• CPC Class Codes: B08B 7/0035 by radiant energy, e.g. UV, laser, light beam or the like
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H05H 1/44 using more than one torch

Abstract

A method of removing metal-containing polymeric material and ion implanted or plasma damaged photoresist from a surface using a plasma jet system, by generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma, and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

Claims

1. A method of removing metal-containing polymeric material from a surface using an atmospheric downstream plasma jet system, comprising:

generating radicals having high energy and high density from atmospheric plasma having high density and high energy by introducing a reactant gas to the plasma, wherein the radical density is higher than about 10¹⁸/cm³ and the radical energy is about 0.1 eV; and

placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

2. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the radicals include oxygen radicals.

3. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the temperature of the surface is between about 100 and about 300 degrees centigrade.

4. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the reactant gas is oxygen, and the reactant gas is introduced at a rate between about 1 and 5 liters per minute.

5. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein a distance between a torch of the plasma jet system and the surface is between 80 and 200 mm.

6. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the surface is a front surface of a semiconductor wafer.

7. A method of removing metal-containing polymeric material from a surface using an atmospheric downstream plasma jet system as claimed in claim 1, wherein the high energy and high density plasma is a form or derivative of arc plasma.

8. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the reactant gas is introduced through a nozzle.

9. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 8, wherein the distance between the nozzle and the plasma is between 5 and 15 mm.

10. A method of removing polymeric material from a surface using an atmospheric downstream plasma jet system, comprising:

generating high density and high energy plasma;

passing a reaction gas through an atmospheric plasma zone of the plasma jet system in which the high density and high energy plasma was generated to generate radicals having high energy and high density, wherein the radical density is higher than about 10¹⁸/cm³ and the radical energy is about 0.1 eV; and

placing the surface at a distance from the plasma zone, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

11. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the radicals include oxygen radicals.

12. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the temperature of the surface is between about 100 and about 300 degrees centigrade.

13. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the reactant gas is oxygen, and the reactant gas is introduced at a rate between about 1 and 5 liters per minute.

14. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein a distance between a torch of the plasma jet system and the surface is between 80 and 200 mm.

15. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the surface is a front surface of a semiconductor wafer.

16. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the reactant gas is introduced through a nozzle.

17. A method of removing polymeric material from a surface using a plasma jet system according to claim 16, wherein the distance between the nozzle and the plasma is between 5 and 15 mm.

18. A method of removing polymeric material from a surface using an atmospheric downstream plasma jet system as claimed in claim 10, wherein the high energy and high density plasma is a form or derivative of arc plasma.

19. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system, wherein the photoresist or other organic/polymer materials have been hardened by ion beams or atomic/molecular fluxes of any kind during device manufacturing, comprising:

generating radicals having high energy and high density from atmospheric plasma of high energy and high density by introducing a reactant gas to the plasma, wherein the radical density is higher than about 10¹⁸/cm³ and the radical energy is about 0.1 eV; and

placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

20. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system as claimed in claim 19, wherein the high energy and high density plasma is a form or derivative of arc plasma.

21. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system, wherein the photoresist or other organic/polymer materials have been hardened by ion beams or atomic/molecular fluxes of any kind during device manufacturing, comprising:

generating a high energy and high density plasma;

passing a reaction gas through an atmospheric plasma zone of the plasma jet system in which the high energy and high density plasma was generated to generate radicals having high energy and high density, wherein the radical density is higher than about 10¹⁸/cm³ and the radical energy is about 0.1 eV; and

placing the surface at a distance from the plasma zone, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained.

22. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system as claimed in claim 21, wherein the high energy and high density plasma is a form or derivative of arc plasma.

23. A method of removing metal-containing polymeric material from a front surface of a semiconductor wafer using a plasma jet system, comprising

generating radicals having high energy and high density from atmospheric plasma by introducing a reactant gas to the plasma;

and

placing the front surface of the semiconductor wafer at a distance from the plasma, whereby ionic reaction on the front surface of the semiconductor wafer is minimized while the removing action of the radicals on the front surface of the semiconductor wafer is maintained, wherein the semiconductor wafer is rotated at 10 to 15 cycles per second about its center axis perpendicular to the plane of the front surface of the semiconductor wafer to achieve uniform removal action.

24. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 23, wherein a plurality of wafers are arranged in a tray pattern and rotated about a plane of the tray pattern, whereby each wafer is successively exposed to radical removal action as it is rotated about the plane of the tray pattern.

25. A method of removing polymeric material from a front surface of a semiconductor wafer using a plasma jet system, comprising:

passing a reaction gas through an atmospheric plasma zone of the plasma jet system to generate radicals having high energy and high density; and

placing the front surface of the semiconductor wafer at a distance from the plasma zone, whereby ionic reaction on the front surface of the semiconductor wafer is minimized while the removing action of the radicals on the front surface of the semiconductor wafer is maintained, wherein the semiconductor wafer is rotated at 10 to 15 cycles per second about its center axis perpendicular to the plane of the front surface of the semiconductor wafer to achieve uniform removal action.

26. A method of removing polymeric material from a surface using a plasma jet system according to claim 25, wherein a plurality of wafers are arranged in a tray pattern and rotated about a plane of the tray pattern, whereby each wafer is successively exposed to radical removal action as it is rotated about the plane of tray pattern.