Semiconductor storage device

• US 6,535,417 B2
• Filed: 04/19/2001
• Issued: 03/18/2003
• Est. Priority Date: 07/31/2000
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Tsuda, Nobuhiro, Nii, Koji
• Primary Examiner(s): Lam, David
• Application Number:
  US09/837,233
• Publication Number:
  US 20020012265A1
• Time in Patent Office: 698 Days
• Field of Search: 365/154, 365/177, 365/189.01, 365/189.04, 365/156, 365/230.05
• US Class Current: 365/154
• CPC Class Codes: G11C 11/412 using field-effect transistors only

Abstract

An SRAM memory cell is constituted by complementarily connecting first inverter composed of NMOS transistor and a PMOS transistor, and a second inverter composed of another NMOS transistor and another PMOS transistor. Still another NMOS transistor is so provided that its gate is connected to a node between the NMOS and PMOS transistors in the first inverter. Still another NMOS transistor is so provided that its gate is connected to a node between the NMOS and PMOS transistors in the second inverter. As a result, capacity values for gate capacities are added to the storage nodes.

Claims

1. A semiconductor storage device comprising:

a first MOS transistor, which is of an N-channel type, having a source connected to a ground line;

a second MOS transistor, which is of an N-channel type, having a source connected to a ground line, a drain connected to a gate of said first MOS transistor and its connection point being a first node, and a gate connected to a drain of said first MOS transistor and its connection point being a second node;

a third MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said first node, and at least one of a source and a drain being in an open state;

a fourth MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said second node, and at least one of a source and a drain being in an open state;

a fifth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said first MOS transistor, and a gate connected to the gate of said first MOS transistor; and

a sixth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said second MOS transistor, and a gate connected to the gate of said second MOS transistor.

2. The semiconductor storage device according to claim 1, wherein one of the source and the drain of said third MOS transistor is connected to one of the source and the drain of said fourth MOS transistor and a remaining one of the sources and the drains of said third and fourth MOS transistors are in an open state.

3. A semiconductor storage device comprising:

a first MOS transistor, which is of an N-channel type, having a source connected to a ground line;

a second MOS transistor, which is of an N-channel type, having a source connected to a ground line, a drain connected to a gate of said first MOS transistor and its connection point being a first node, and a gate connected to a drain of said first MOS transistor and its connection point being a second node;

a third MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said first node;

a fourth MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said second node;

a fifth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said first MOS transistor, and a gate connected to the gate of said first MOS transistor; and

a sixth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said second MOS transistor, and a gate connected to the gate of said second MOS transistor,

wherein the drain and source of said third MOS transistor are connected to the ground line or the power-supply line, and the drain and the source of said fourth MOS transistor are connected to the ground line or the power-supply line.

4. A semiconductor storage device comprising:

a first MOS transistor, which is of an N-channel type, having a source connected to a ground line;

a second MOS transistor, which is of an N-channel type, having a source connected to a ground line, a drain connected to a gate of said first MOS transistor and its connection point being a first node, and a gate connected to a drain of said first MOS transistor and its connection point being a second node;

a third MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said first node;

a fourth MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said second node;

a fifth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said first MOS transistor, and a gate connected to the gate of said first MOS transistor; and

a sixth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said second MOS transistor, and a gate connected to the gate of said second MOS transistor,

wherein the gate and the source or the drain of said third MOS transistor are connected to each other, and the gate and the source or the drain of said fourth MOS transistor are connected to each other.

5. A semiconductor storage device comprising:

a first MOS transistor, which is of an N-channel type, having a source connected to a ground line;

a second MOS transistor, which is of an N-channel type, having a source connected to a ground line, a drain connected to a gate of said first MOS transistor and its connection point being a first node, and a gate connected to a drain of said first MOS transistor and its connection point being a second node;

a third MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said first node;

a fourth MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said second node;

a fifth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said first MOS transistor, and a gate connected to the gate of said first MOS transistor; and

a sixth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said second MOS transistor, and a gate connected to the gate of said second MOS transistor,

wherein the gate and the source and the drain of said third MOS transistor are connected to each other, and the gate and the source and the drain of said fourth MOS transistor are connected to each other.

6. A semiconductor storage device comprising:

a first MOS transistor, which is of an N-channel type, having a source connected to a ground line;

a second MOS transistor, which is of an N-channel type, having a source connected to a ground line, a drain connected to a gate of said first MOS transistor and its connection point being a first node, and a gate connected to a drain of said first MOS transistor and its connection point being a second node;

a third MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said first node;

a fourth MOS transistor, which is either of an N-channel type MOS transistor or a P-channel type MOS transistor, having a gate connected to said second node, wherein one of a source and a drain of said third MOS transistor is connected to one of a source and a drain of said fourth MOS transistor and a remaining one of the source and the drain of said third MOS transistor is connected to a remaining of one of the source and the drain of said fourth MOS transistor;

a fifth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said first MOS transistor, and a gate connected to the gate of said first MOS transistor; and

a sixth MOS transistor, which is of a P-channel type, having a source connected to a power-supply line, a drain connected to the drain of said second MOS transistor, and a gate connected to the gate of said second MOS transistor.

7. The semiconductor storage device according to claim 6, wherein a node, to which one of the source and the drain of said third MOS transistor and one of the source and the drain of said fourth MOS transistor is connected, is connected to ground or to a power supply line.