Diamond coatings on reactor wall and method of manufacturing thereof

• US 6,537,429 B2
• Filed: 12/29/2000
• Issued: 03/25/2003
• Est. Priority Date: 12/29/2000
• Status: Expired due to Fees

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Chang, Christopher C., Daugherty, John E., OʼDonnell, Robert J.
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US09/749,925
• Publication Number:
  US 20020086501A1
• Time in Patent Office: 816 Days
• Field of Search: 428/408, 428/332, 428/698, 428/704, 204/193, 204/192.1, 204/192.11, 204/192.15, 204/192.25, 204/196.37, 204/298.01, 427/577
• US Class Current: 204/193
• CPC Class Codes: B01J 19/0073 Sealings sealings for pressure vessels per se F16J15/00
• CPC Class Codes: B01J 19/02 Apparatus characterised by being constructed of material selected for its chemically-resistant properties
• CPC Class Codes: B01J 2219/0231 of diamond
• CPC Class Codes: B01J 2219/025 characterised by the construction materials of the reactor vessel proper
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/27 Diamond only
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: H01J 37/32495 Means for protecting the vessel against plasma
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

Claims

1. A component of semiconductor processing equipment comprising a diamond containing material exposed to plasma in the equipment, the diamond containing material comprising diamond or a diamond-like material and from about 20 to about 80 wt. % of at least one additional material.

18. The coating process according to claim 1, wherein said surface of said component comprises a metal, ceramic or polymer surface.

19. The coating process according to claim 18, wherein said surface is anodized aluminum.

20. The coating process according to claim 1, wherein said first intermediate coating is not optional.

21. The coating process according to claim 20, wherein said first intermediate coating comprises a metal, ceramic or polymer coating.

22. The coating process according to claim 1, wherein said component comprises a chamber wall of a plasma etching chamber.

23. The coating process according to claim 1, further comprising forming a roughened surface on said component, said diamond containing material being deposited on said roughened surface.

24. The coating process according to claim 1, wherein said diamond containing material comprises an amorphous tetrahedral carbon.

25. The coating process according to claim 1, wherein said diamond containing material comprises at least one material other than diamond or a diamond-like material.

26. The coating process according to claim 25, wherein said other material is a refractory metal or polymer.

27. The coating process according to claim 26, wherein said other material includes titanium or silicon.

28. The coating process according to claim 27, wherein said other material comprises titanium carbide, titanium boride, titanium nitride, silicon carbide, silicon boride, silicon nitride or mixtures thereof.

29. The coating process according to claim 25, wherein said diamond containing material is doped with said at least one other material.

30. The coating process according to claim 25, wherein said diamond containing material is in the form of a composite of a diamond or diamond-like material and said other material.

31. The coating process according to claim 1, wherein said diamond containing material is deposited by chemical vapor deposition, plasma spray coating, sublimation, laser vaporization, sputtering, sputtering deposition, ion beam coating, spray coating, dip coating, evaporation coating, roll-on coating or brush coating.

2. A component of semiconductor processing equipment comprising a diamond containing material exposed to plasma in the equipment, the diamond containing material having a thickness of at least 0.004 inches.

3. The component according to claim 2, wherein the diamond containing material is disposed on a surface which is a metal, ceramic or polymer surface.

4. The component according to claim 3, wherein said surface is anodized aluminum.

5. The component according to claim 2, wherein a first intermediate coating is on the surface.

6. The component according to claim 2, wherein said component comprises a chamber wall of a plasma etching chamber.

7. The component according to claim 2, wherein said diamond containing material comprises an amorphous tetrahedral carbon.

8. The component according to claim 2, wherein said diamond containing material comprises at least one material other than diamond or a diamond-like material.

9. The component according to claim 8, wherein said other material is a refractory metal or polymer.

10. The component according to claim 9, wherein said other material includes titanium or silicon.

11. The component according to claim 10, wherein said other material comprises titanium carbide, titanium boride, titanium nitride, silicon carbide, silicon boride, silicon nitride or mixtures thereof.

12. The component according to claim 2, wherein said diamond containing material is doped with at least one other material.

13. The component according to claim 8, wherein said diamond containing material is in the form of a composite of a diamond or diamond-like material and said at least one material other than diamond or a diamond-like material.

14. The component according to claim 2, further comprising one or more additional diamond containing or intermediate coatings.

15. The component according to claim 2, wherein diamond or a diamond-like material forms a continuous matrix phase of said diamond containing material.

16. The component according to claim 2, wherein said entire component is made of said diamond containing material.

17. A process of coating a surface of a component of semiconductor processing equipment, the processing comprising:

(a) optionally depositing a first intermediate coating on a surface of a component of semiconductor processing equipment;

(b) optionally depositing a second intermediate coating on said first intermediate layer or on said surface; and

(c) depositing a diamond containing material on said component to form an outer corrosion resistant surface, the diamond containing material having a thickness of at least 0.004 inches and being exposed to plasma in the equipment.