Electrically programmable photolithography mask

• US 6,537,710 B2
• Filed: 03/28/2002
• Issued: 03/25/2003
• Est. Priority Date: 02/27/1998
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Pierrat, Christophe, Cutter, Douglas J.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US10/112,559
• Publication Number:
  US 20020102479A1
• Time in Patent Office: 362 Days
• Field of Search: 430/5, 430/322, 250/492.22, 250/492.1, 345/43
• US Class Current: 430/5
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

An electronically programmed mask is connected to an electronic device, such as a processor. In operation, a mask design is first entered into the processor. The processor controls a display of an image on the electronically programmed mask, wherein the display replicates conventional type masks. The electronically programmed mask is designed such that the display presented on its screen provides optical contrast and characteristics that are easily changed or reprogrammed by the processor. Electronically controlled masks provide the same patterns as mechanical type masks without requiring rigid, permanent type structures to form a desired pattern.

Claims

1. A photolithography system comprising:

an illuminator providing a light source; and

an electrically programmable photolithography mask comprising;

a first region of the electronically programmable mask which allows for approximately 100% transmission from a light source;

a second region of the electronically programmable mask that allows a lesser percentage of light from the light source than the first region, such that a phase of light passing through the second is approximately 180 degrees out-of-phase with light passing through the first region; and

a third region of the electronically programmable mask that allows a lesser percentage of light from the light source than the first region, such that a phase of light passing through the third region is approximately 180 degrees out-of-phase with light passing though the first region.

2. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light; and

a second region of the electronically programmable mask which allows transmission of light, wherein the transmission of light is phase shifted approximately 180 degrees between the first region and the second region.

3. The photolithography system of claim 2, further including a third region of the electronically programmable mask which allows transmission of light, wherein transmission of light through the third region is a lesser percentage than the transmission of light through the first region and wherein the transmission of light is phase shifted between the first region and the third region.

4. The photolithography system of claim 3, wherein the third region blocks approximately 100% of light.

5. The photolithography system of claim 3, wherein the third region blocks approximately 10% of light.

6. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light; and

a second region of the electronically programmable mask which allows transmission of light, such that transmission of light through the second region is a lesser percentage than the transmission of light through the first region and such that the transmission of light is phase shifted between the first region and the second region.

7. The photolithography system of claim 6, wherein transmission of light through the second region is a approximately 10% of the transmission of light through the first region.

8. The photolithography system of claim 6, wherein the second region blocks approximately 100% of light.

9. The photolithography system of claim 6, wherein transmission of light is phase shifted approximately 180 degrees between the first region and the second region.

10. A photolithography system for programming an electronically programmable mask, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light; and

a second region of the electronically programmable mask which allows transmission of light, such that transmission of light through the second region is a lesser percentage than the transmission of light through the first region and such that the transmission of light is phase shifted approximately 180 degrees between the first region and the second region.

11. The photolithography system of claim 10, wherein transmission of light through the second region is a approximately 10% of the transmission of light through the first region.

12. The photolithography system of claim 10, wherein the second region blocks approximately 100% of light.

13. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light;

a second region of the electronically programmable mask which allows transmission of light, such that the transmission of light through the second region is phase shifted between the first region and the second region; and

a third region of the electronically programmable mask wherein transmission of light through the third region is a lesser percentage than the transmission of light through the first region.

14. The photolithography system of claim 13, wherein transmission of light through the second region is approximately 180 degrees out-of-phase with the transmission of light through the first region.

15. The photolithography system of claim 13, wherein transmission of light through the third region is approximately 10% of the transmission of light through the first region.

16. The photolithography system of claim 13, wherein the third region blocks approximately 100% of light.

17. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light;

a second region of the electronically programmable mask which allows transmission of light, such that the transmission of light through the second region is phase shifted approximately 180 degrees between the first region and the second region; and

a third region of the electronically programmable mask that blocks approximately 100% of light.

18. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first region of the electronically programmable mask which allows transmission of light;

a second region of the electronically programmable mask which allows transmission of light, such that transmission of light through the second region is a lesser percentage than the transmission of light through the first region and such that the transmission of light is phase shifted between the first region and the second region; and

a third region of the electronically programmable mask that blocks approximately 100% of light.

19. The photolithography system of claim 18, wherein transmission of light through the second region is approximately 10% of the transmission of light through the first region.

20. The photolithography system of claim 18, wherein the second region blocks approximately 100% of light.

21. The photolithography system of claim 18, wherein transmission of light is phase shifted approximately 180 degrees between the first region and the second region.

22. A photolithography system, comprising:

a radiation source; and

an electrically programmable mask, including;

a first layer of the electronically programmable mask, including;

a first region that allows transmission of light from a light source; and

a second region that allows transmission of light from the light source, such that the transmission of light through the second region is phase shifted between the first region and the second region; and

a second layer of the electronically programmable mask, including;

a first region that allows transmission of light from the light source; and

a second region such that transmission of light through the second region is a lesser percentage than the transmission of light through the first region.

23. The photolithography system of claim 22, wherein transmission of light is phase shifted approximately 180 degrees between the first region and the second region.

24. The photolithography system of claim 22, wherein transmission of light through the second region is approximately 10% of the transmission of light through the first region.

25. The photolithography system of claim 22, wherein the second region blocks approximately 100% of light.