×

CVD plasma assisted low dielectric constant films

  • US 6,537,929 B1
  • Filed: 05/25/2000
  • Issued: 03/25/2003
  • Est. Priority Date: 02/11/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for depositing a low dielectric constant film, comprising reacting two or more organosilane or organosiloxane compounds with an oxidizing gas at an RF power level sufficient to deposit a film comprising carbon-silicon bonds and a dielectric constant less than about 3, wherein each of the organosilane or organosiloxane compounds has at least one silicon-hydrogen bond.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×