Trenched semiconductor device and method of fabricating the same

• US 6,538,280 B2
• Filed: 01/14/1998
• Issued: 03/25/2003
• Est. Priority Date: 07/11/1997
• Status: Expired due to Term

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Nakamura, Katsumi
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US09/007,228
• Publication Number:
  US 20010042885A1
• Time in Patent Office: 1,896 Days
• Field of Search: 257/301, 257/330, 257/333, 257/77, 257/411, 257/329, 257/334, 257/754
• US Class Current: 257/333
• CPC Class Codes: H01L 29/66348 with a recessed gate
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT

Abstract

In a trenched MOS gate power device having a trenched MOS gate structure, a gate insulating film is formed on the walls of trenches to extend onto a major surface of a semiconductor substrate, and gates are formed so as to fill up the trenches and to extend onto the gate insulating film on the major surface of the semiconductor substrate. The gate insulating film is formed so that the thickness of a portion thereof formed on the major surface of the semiconductor substrate is greater than that of a portion thereof formed on the walls of the trenches to narrow portions of the gates corresponding to the tops of the trenches. Thus, the characteristics of a gate insulating film formed on the walls of trenches are improved.

Claims

1. A trenched semiconductor device including at least a transistor, said trenched semiconductor device comprising:

a semiconductor substrate, excluding silicon carbide, provided with at least one trench in a major surface thereof, the edge of said trench at said major surface being rounded, a prescribed portion of a sidewall of said trench serving as a channel of said transistor;

an insulating film formed on the wall of the trench and extending onto the major surface of the semiconductor substrate, said insulating film serving as a gate insulating film of said transistor; and

a conductive part filling up the trench and extending on to the insulating film, all around the trench, on the major surface of the semiconductor substrate, said conductive part serving as a gate of said transistor, wherein the thickness of the portion of the insulating film is increased at the top portion of the trench so that the thickness of the portion of the conductive part is reduced at the top portion of the trench.

2. The trenched semiconductor device, according to claim 1, wherein the insulating film is continuously formed in the adjacent trenches and on the major surface of the semiconductor substrate therebetween, and the conductive part is continuously formed filling up the adjacent trenches and extending onto the insulating film on the major surface of the semiconductor substrate therebetween.

6. The trenched semiconductor device according to claim 1, wherein said conductive part contains implanted nitrogen.

7. The trenched semiconductor device according to claim 1, wherein the semiconductor substrate is a silicon wafer, the insulating film is a silicon dioxide film, and the conductive part is made of polysilicon.

3. A trenched semiconductor device including at least a transistor, said trenched semiconductor device comprising:

a semiconductor substrate, excluding silicon carbide, provided with at least one trench in a major surface thereof, the edge of said trench at said major surface being rounded, a prescribed portion of a sidewall of said trench serving as a channel of said transistor;

an insulating film formed on the wall of the trench and extending onto the major surface of the semiconductor substrate, said insulating film serving as a gate insulating film of said transistor; and

a conductive part filling up the trench and extending on to the insulating film, all around the trench, on the major surface of the semiconductor substrate, said conductive part serving as a gate of said transistor, wherein a capacitor area of the portion of the insulating film, lying on the major surface of the semiconductor substrate, is 5% or above of a total capacitor area of the insulating film.

4. A trenched semiconductor device including at least a transistor, said trenched semiconductor device comprising:

a semiconductor substrate, excluding silicon carbide, provided with at least one trench in a major surface thereof, the edge of said trench at said major surface being rounded, a prescribed portion of a sidewall of said trench serving as a channel of said transistor;

an insulating film formed on the wall of the trench and extending onto the major surface of the semiconductor substrate, said insulating film serving as a gate insulating film of said transistor; and

a conductive part filling up the trench and extending on to the insulating film, all around the trench, on the major surface of the semiconductor substrate, said conductive part serving as a gate of said transistor, wherein a gate edge length of the portion of the insulating film, lying outside the trench, is 30% or above of a total gate edge length of the insulating film.

5. A trenched semiconductor device including at least a transistor, said trenched semiconductor device comprising:

a semiconductor substrate, excluding silicon carbide, provided with at least one trench in a major surface thereof, the edge of said trench at said major surface being rounded, a prescribed portion of a sidewall of said trench serving as a channel of said transistor;

an insulating film formed on the wall of the trench and extending onto the major surface of the semiconductor substrate, said insulating film serving as a gate insulating film of said transistor; and

a conductive part filling up the trench and extending on to the insulating film all around the trench, on the major surface of the semiconductor substrate, said conductive part serving as a gate of said, wherein said insulating film is composed of either a two-layer construction consisting of a thermal oxide film and a CVD film formed on the thermal oxide film, a two-layer construction consisting of a CVD film and a thermal oxide film formed on the CVD film, or a three-layer construction consisting of a thermal oxide film, a CVD film formed on the thermal oxide film, and a thermal oxide film formed on the CVD film.