×

Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge

  • US 6,538,462 B1
  • Filed: 11/30/1999
  • Issued: 03/25/2003
  • Est. Priority Date: 11/30/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of characterizing a dielectric layer disposed on a semiconductor wafer, the method comprising:

  • positioning the semiconductor wafer relative to a test device;

    depositing on a surface of the dielectric layer a corona ionic charge at a rate and fluence sufficient to change a tunneling current between the semiconductor wafer and the dielectric layer; and

    measuring with the test device, a stress induced leakage current characteristic across the dielectric layer.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×