Semiconductor integrated circuit for which high voltage countermeasure was taken
First Claim
1. A semiconductor integrated circuit comprising:
- a first node to which a first voltage is applied;
a plurality of first transistors of a first channel each having a current path which has a first end and a second end and a gate, the first end of the current path being connected to the first node;
a plurality of second nodes to which the second end of the current paths of the plurality of the first transistors is connected, respectively;
a plurality of second transistors of a second channel each having a current path which has a first end and a second end and a gate, the first end of the current path is connected to one of the second nodes, respectively;
a third node to which the second ends of the current paths of the plurality of second transistors are connected in common;
a fourth node to which a second voltage lower than the first voltage is applied;
a third transistor of the second channel having a current path and a gate, the current path is connected between the third node and the fourth node, and a third voltage higher than the second voltage is applied to the gate; and
wherein the first, second, and third voltages are constant voltages.
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Accused Products
Abstract
There are provided a plurality of CMOS configured pre-driver circuits, wherein an increased voltage obtained by increasing a power voltage is applied to a source of each P-channel transistor, and a word line driver circuit each having a P-channel transistor and an N-channel transistor to which an output of the pre-driver circuit is inputted. The source of each N-channel transistor in the plurality of pre-driver circuits is connected in common to that of each N-channel transistor in the word line driver circuit, and a source-drain path of an N-channel transistor for voltage alleviation is connected between this source common node and a node of a grounding voltage. The increased voltage is applied to a gate of the N-channel transistor for voltage alleviation.
15 Citations
14 Claims
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1. A semiconductor integrated circuit comprising:
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a first node to which a first voltage is applied;
a plurality of first transistors of a first channel each having a current path which has a first end and a second end and a gate, the first end of the current path being connected to the first node;
a plurality of second nodes to which the second end of the current paths of the plurality of the first transistors is connected, respectively;
a plurality of second transistors of a second channel each having a current path which has a first end and a second end and a gate, the first end of the current path is connected to one of the second nodes, respectively;
a third node to which the second ends of the current paths of the plurality of second transistors are connected in common;
a fourth node to which a second voltage lower than the first voltage is applied;
a third transistor of the second channel having a current path and a gate, the current path is connected between the third node and the fourth node, and a third voltage higher than the second voltage is applied to the gate; and
wherein the first, second, and third voltages are constant voltages. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor integrated circuit comprising:
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a first node to which a first voltage obtained by increasing a power voltage is applied;
a plurality of decode circuits arranged in an array, the plurality of decode circuits each comprising;
a partial decode circuit for decoding address signals;
pre-driver circuits each having at least one inverter circuit which comprises a first transistor of a P-channel having a source, a drain, and a gate, the source being connected to the first node, and a second transistor of an N-channel having a source, a drain and a gate, the drain of the second transistor being connected to a drain of the first transistor, an output of the partial decode circuit being inputted to the gate of each of the first and second transistors; and
a word line driver circuit comprises a third transistor of a P-channel having a source, a drain and a gate, the source of the third transistor being connected to the first node, and a fourth transistor of an N-channel having a source, a drain, and a gate, the drain of the fourth transistor being connected to a drain of the third transistor, and the source of the fourth transistor being connected to a source of the second transistor, an output of the pre-driver circuit being supplied to the word line drive circuit;
a second node to which a second voltage lower than the first voltage is applied;
a fifth transistor of an N-channel having a source, a drain, and a gate, a source-drain path is connected between a common source connection node of the second and fourth transistors and the second node, and a third voltage higher than the second voltage is applied to the gate;
wherein the first, second, and third voltages are constant voltages. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification