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Removable amorphous carbon CMP stop

  • US 6,541,397 B1
  • Filed: 03/29/2002
  • Issued: 04/01/2003
  • Est. Priority Date: 03/29/2002
  • Status: Expired due to Fees
First Claim
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1. A method for processing a substrate in a chamber, comprising:

  • depositing at least one dielectric layer on a substrate surface, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less;

    forming one or more amorphous carbon layers on the at least one dielectric layer; and

    removing the one or more amorphous carbon layers by exposing the one or more amorphous carbon layers to a plasma of a hydrogen-containing gas.

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