Microbolometer operating system

• US 6,541,772 B2
• Filed: 12/26/2000
• Issued: 04/01/2003
• Est. Priority Date: 12/26/2000
• Status: Expired due to Term

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Wood, Roland Andrew
• Primary Examiner(s): Hannaher, Constantine
• Assistant Examiner(s): Gabor, Otilia
• Application Number:
  US09/748,784
• Publication Number:
  US 20020109092A1
• Time in Patent Office: 826 Days
• Field of Search: 250/338.1, 250/332, 250/370.08, 250/338.4, 250/349, 250/445.1
• US Class Current: 250/338.1
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

A microbolometer for the detection of infrared radiation that has a substrate and an array of sensor elements fixed relative to the substrate. In one embodiment, at least some of the sensor elements are less thermally isolated from the substrate than others. The less thermally isolated sensor elements are selected when transients are expected to exist within the sensor array. In another embodiment, all of the sensor elements are deselected when transients are expected.

Claims

1. An infrared radiation sensor, comprising:

a substrate;

a plurality of sensor elements fixed relative to the substrate;

at least one of the sensor elements being less thermally isolated from the substrate than another one of the sensor elements.

2. The infrared sensor of claim 1, wherein each of the sensor elements include a resistor.

3. The infrared sensor of claim 2, wherein each of the sensor elements include a thin film resistor.

4. The infrared sensor of claim 1, wherein the plurality of sensor elements are arranged into a number of rows and columns, each row having a row read line, with each sensor element in a row connected between a supply and a corresponding row read line through a column select switch, the column select switch being controlled by a corresponding column select signal, a readout line being selectively connected to the row readout lines through a number of row select switches, each row select switch being controlled by a corresponding row select signal, the readout line being coupled to a second supply via a transimpedance amplifier.

5. The infrared sensor of claim 4, wherein the sensor elements in a selected row are read in succession from a first sensor element to a last sensor element before the sensor elements in a next selected row are read.

6. The infrared sensor of claim 5, wherein at least one of the first sensor elements are less thermally isolated from the substrate than another sensor element in the same row.

7. The infrared sensor of claim 6, wherein the first sensor element in each row is selected by the column select signal for a longer period of time than another one of the sensor elements in the same row.

8. The infrared sensor of claim 7 wherein each column select switch comprises a transistor.

9. The infrared sensor of claim 8 wherein each row select switch comprises a pass gate.

10. The infrared sensor of claim 1, wherein the plurality of sensor elements are arranged into a number of rows and columns, each row having a row read line and each column having a column select line, with each sensor element in a row connected between a unique column select line and a common row read line through a unique column select switch, a readout line being selectively connected to the row readout lines through a number of row select switches, each row select switch being controlled by a corresponding row select signal, the readout line being coupled to a second supply via a transimpedance amplifier.

11. The infrared sensor of claim 10, wherein the column select switch includes a diode.

12. An infrared sensor array, comprising:

a substrate;

a plurality of sensor elements fixed relative to the substrate and arranged into a number of rows and columns;

each row having a corresponding row read line;

each sensor element connected between a supply and a corresponding row read line through a column select switch, the column select switch being controlled by a corresponding column select signal;

a read output line;

each of the row read lines selectively connected to the read output line through a corresponding row select switch, each row select switch being controlled by a corresponding row select signal;

the readout line coupled to an amplifier; and

a controller for controlling the row select signals and the column select signals such that the sensor elements in a selected row are selected and read in succession from a first sensor element to a last sensor element before the sensor elements in a next row are selected and read, the controller selecting the first sensor element in each row for a longer period of time than another sensor element in the same row.

13. An infrared sensor array according to claim 12, wherein the first sensor element that is selected in each row is less thermally isolated from the substrate than another sensor element in the same row.

14. The infrared sensor of claim 12, wherein each column select switch comprises a transistor.

15. The infrared sensor of claim 12, wherein each row select switch comprises a pass gate.

16. The infrared sensor of claim 12, wherein the amplifier is a transimpedance amplifier.

17. The infrared sensor of claim 16, wherein the transimpedance amplifier effectively grounds the read output line.

18. A method for reading an infrared sensor array having a number of infrared sensor elements that are arranged into a number of rows and columns, the method comprising:

sequentially reading the sensor elements of a first selected row of the infrared sensor array from a first sensor element to a last sensor element, the first sensor element being read longer than a subsequent sensor element; and

sequentially reading the sensor elements of a second selected row of the infrared sensor array from a first sensor element to a last sensor element, the first sensor element being read longer than a subsequent sensor element.

19. A method according to claim 18, wherein the first sensor element of each row has a higher thermal mass than subsequent sensor elements in the same row.

20. An infrared radiation sensor, comprising:

a substrate;

a plurality of sensor elements fixed relative to the substrate;

at least one of the sensor elements being less thermally isolated from the substrate than another one of the sensor elements; and

a controller for selecting a sensor element that is less thermally isolated from the substrate when a transient is expected.

21. An infrared radiation sensor, comprising:

a plurality of sensor elements;

at least one of the sensor elements being less thermally isolated from the substrate than another one of the sensor elements; and

a controller for deselecting all sensor elements when a transient is expected.

22. An infrared radiation sensor for providing an image, comprising:

a substrate;

a plurality of image-forming thermally isolated sensor elements having substantially similar sensing characteristics fixed relative to the substrate, the plurality of image-forming thermally isolated sensor elements arranged into a number of rows and a number of columns;

at least one sensor element in each row being the sensor element that is initially selected and read in each row; and

the at least one sensor element in each row providing an output signal that is not used to form the image.

23. The infrared radiation sensor of claim 22 wherein the at least one sensor in each row is selected and read for a longer period of time than another sensor in the same row.

24. The infrared radiation sensor of claim 23 wherein the at least one sensor in each row is selected and read for a longer period of time than all other sensors in the same row.

25. The infrared radiation sensor of claim 22 wherein the at least one sensor in each row is less thermally isolated from the substrate than another sensor in the same row.

26. The infrared radiation sensor of claim 25 wherein the at least one sensor in each row is less thermally isolated from the substrate than all other sensors in the same row.