Particle beam current monitoring technique

• US 6,541,780 B1
• Filed: 07/28/1998
• Issued: 04/01/2003
• Est. Priority Date: 07/28/1998
• Status: Expired due to Term

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Richards, Steven L. F., Tokoro, Nobuhiro
• Primary Examiner(s): Lee, John R.
• Assistant Examiner(s): Fernandez, Kalimah
• Application Number:
  US09/123,635
• Time in Patent Office: 1,708 Days
• Field of Search: 250/397, 250/492.2, 250/310, 250/311, 250/492.21, 250/492.3, 250/296
• US Class Current: 250/492.2
• CPC Class Codes: G01R 19/0061 Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
• CPC Class Codes: H01J 2237/31703 Dosimetry

Abstract

A method of monitoring particle beam current in an ion implanter in which the ion beam is analyzed to separate it into a separate sub-beam for each ion charge state. At least one sub-beam, having a charge state different from the desired charge state, is intercepted, and the current of the intercepted sub-beam is measured. This current is useful as an estimate of the current of the desired sub-beam which is used for the implantation.

Claims

1. A method of determining a current of an ion beam directed at a target during an ion implantation process, the method comprising acts of:

generating an ion beam;

separating the ion beam by energy analysis to select different charge states of a same species of ions to provide a sub-beam of ions having a desired charge state, which constitutes an implantation ion beam, and a sub-beam of ions having an undesired charge state;

directing the implantation ion beam onto the target to effect the ion implantation process;

intercepting the sub-beam of ions having the undesired charge state to provide an intercepted sub-beam;

measuring a current of the intercepted sub-beam to provide a measured current;

determining an absolute value of a current of the implantation ion beam based on the measured current and on a known relationship between the current of the intercepted sub-beam and the current of the implantation ion beam.

2. The method of claim 1, wherein the ion beam comprises ions selected from a group of species consisting of boron, phosphorus and arsenic.

3. The method of claim 1, wherein there are a plurality of sub-beams of ions having an undesired charge state, and in which intercepting the sub-beam includes intercepting all of said sub-beams.

4. The method of claim 1, which the charge state of the intercepted sub-beam of ions is zero.

5. The method of claim 4 in which measuring the current of the intercepted sub-beam of ions includes measuring a current of secondary electrons emitted as a result of the act of intercepting the sub-beam.

7. The apparatus of claim 1, wherein the measuring device includes at least one Faraday cup.

13. The apparatus of claim 7 in which the measuring device includes a plurality of Faraday cups, each said Faraday cup intercepting a single sub-beam of ions having an undesired charge state.

14. The apparatus of claim 7 further including at least one bias electrode maintained at a negative potential and located proximate said Faraday cup, to prevent externally generated electrons from reaching said Faraday cup, and to maintain in the cup electrons generated in the cup.

15. The apparatus of claim 7 further including means for circulating cooling liquid through each said Faraday cup.

6. An apparatus that determines a current of an ion beam directed at a target during an ion implantation process, comprising:

an ion beam generator that provides a beam of ions;

a separating device that separates the beam of ions by energy analysis to select different charge states of a same species of ions to provide a sub-beam of ions having a desired charge state, which constitutes an implantation ion beam, and a sub-beam of ions having an undesired charge state;

a measuring device that measures a current of the sub-beam of ions having the undesired charge state, to provide a measured current; and

a device, coupled to the measuring device, that determines an absolute value of a current of the implantation ion beam based on the measured current and on a known relationship between the current of the implantation ion beam and the measured current.

8. The apparatus of claim 6 wherein the measuring device includes a single Faraday cup.

9. The apparatus of claim 8 in which said single Faraday cup is fixed.

10. The apparatus of claim 9 in which said single Faraday cup intercepts the sub-beam of ions having the undesired charge state, to provide an intercepted beam.

11. The apparatus of claim 10 in which the charge state of the intercepted beam is zero.

12. The apparatus of claim 11 in which said measuring device includes means for measuring a current of secondary electrons emitted as a result of intercepting the sub-beam of ions.

16. The apparatus of claim 8 in which said single Faraday cup is movable, to intercept different sub-beams.