Electron beam photolithographic process

• US 6,541,782 B2
• Filed: 12/05/2000
• Issued: 04/01/2003
• Est. Priority Date: 11/28/2000
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Huang, I-Hsiung, Hwang, Jiunn-Ren
• Primary Examiner(s): Anderson, Bruce
• Assistant Examiner(s): Wells, Nikita
• Application Number:
  US09/734,240
• Publication Number:
  US 20020063222A1
• Time in Patent Office: 847 Days
• Field of Search: 250/492.22, 250/492.1, 250/492.2, 356/244, 430/313, 430/314, 430/315, 355/53
• US Class Current: 250/492.22
• CPC Class Codes: G03F 7/2037 Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
• CPC Class Codes: H01J 2237/0044 of objects being observed or treated
• CPC Class Codes: H01J 2237/3175 Lithography
• CPC Class Codes: H01J 2237/31796 affecting resists

Abstract

An electron beam photolithographic process for patterning an insulation layer over a substrate. A conductive photoresist layer having a conjugate structure is formed over the insulation layer. An electron beam photolithographic process is conducted using a photomask so that the pattern on the photomask is transferred to the conductive photoresist layer.

Claims

1. An electron beam photolithographic process for patterning an insulating layer above a substrate, comprising the steps of:

forming a conductive photoresist having a conjugate molecular structure over the insulation layer; and

performing an electron beam photolithographic process using a photomask having a pattern thereon so that the pattern is transferred to the conductive photoresist layer.

2. The process of claim 1, wherein the conjugate molecular structure includes a phenylene vinylene conjugate structure.

3. The process of claim 1, wherein the conjugate molecular structure includes a phenylene carbonylene conjugate structure.

4. A method for preventing the accumulation of electric charges in a photoresist layer, comprising the steps of:

providing a substrate having an insulation layer thereon;

forming a conductive photoresist layer having an electron resonance structure over the insulation layer; and

performing an electron beam photolithographic process to transfer a pattern on a photomask to the conductive photoresist layer.

5. The method of claim 4, wherein the electron resonance structure includes a phenylene vinylene conjugate structure.

6. The method of claim 4, wherein the electron resonance structure includes a phenylene carbonylene conjugate structure.