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Thin film semiconductor device and production method for the same

  • US 6,541,795 B2
  • Filed: 12/05/2001
  • Issued: 04/01/2003
  • Est. Priority Date: 06/14/1994
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a semiconductor layer comprising a first portion and a second portion wherein the first portion is thinner than the second portion;

    a source region and a drain region provided in the semiconductor layer, at least one of the source region and drain region provided in the first and second portions;

    a channel region between the source and drain regions, provided in the first portion; and

    a gate electrode provided adjacent to the channel region with an insulating film interposed therebetween, wherein a peripheral portion of the semiconductor layer is thinned and an edge portion of a least one of the source and drain region is in the peripheral portion, and wherein the first portion if 300 Å

    or less.

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