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Post metal etch clean process using soft mask

  • US 6,542,282 B2
  • Filed: 12/31/2001
  • Issued: 04/01/2003
  • Est. Priority Date: 12/29/2000
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:

  • depositing a first photoresist layer on a wafer of partially formed devices;

    depositing a metal layer over said first photoresist layer;

    depositing a second photoresist layer over said metal layer;

    patterning said second photoresist layer to expose regions of said metal layer;

    etching said metal layer to remove said exposed regions of said metal layer; and

    cleaning residue created by said etching using a photoresist developer, said first and second photoresist layers remaining after said cleaning.

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