Post metal etch clean process using soft mask

• US 6,542,282 B2
• Filed: 12/31/2001
• Issued: 04/01/2003
• Est. Priority Date: 12/29/2000
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Smith, David M., Roth, Ronald C., Scott, Brian P., Trumbauer, Eric R.
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): CHOI, WILLIAM C
• Application Number:
  US10/036,697
• Publication Number:
  US 20020126368A1
• Time in Patent Office: 456 Days
• Field of Search: 359/290, 359/291, 359/298, 438/702, 438/689, 438/707, 430/273.1, 430/9, 430/11, 430/311, 430/312, 430/320, 430/322, 430/16
• US Class Current: 359/291
• CPC Class Codes: B81C 1/00849 during manufacture
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

A method of patterning a metal layer that cleans the residue from a metal etch process without removing a photoresist etch mask. The method is particularly useful for the fabrication of micromirror devices, or other MEMS devices that use photoresist spacer layers. A photoresist layer is spun on to the mirror metal layer in step 906. The photoresist is patterned and developed in step 908 to form openings to the metal layer. The openings define areas where the mirror metal layer will be removed. The patterned photoresist is inspected in step 910. The mirror metal layer is etched in step 912 using the patterned photoresist layer as an etch mask. After the mirror metal has been etched, the webbing and other residues are removed in a clean up process 914 that uses photoresist developer as a solvent to remove the webbing. After the developer clean up process, the mirrors are inspected in step 916 to verify the proper gaps have been etched between the mirrors and the removal of the mirror etch residue. A photoresist saw prep coating is then spun onto the wafer in step 918, the wafers are sawn in step 920 and scrubbed in step 922 before the mirrors are undercut in step 924. The undercut process removes the photoresist spacer layers on which the hinge yoke and mirror have been fabricated, allowing mirrors to rotate about the torsion hinges.

Claims

1. A method of fabricating a semiconductor device, the method comprising:

depositing a first photoresist layer on a wafer of partially formed devices;

depositing a metal layer over said first photoresist layer;

depositing a second photoresist layer over said metal layer;

patterning said second photoresist layer to expose regions of said metal layer;

etching said metal layer to remove said exposed regions of said metal layer; and

cleaning residue created by said etching using a photoresist developer, said first and second photoresist layers remaining after said cleaning.

2. The method of claim 1, comprising:

deep UV hardening said first photoresist layer.

3. The method of claim 1, comprising:

depositing said first photoresist layer by spinning-on said first photoresist layer.

4. The method of claim 1, comprising:

patterning said first photoresist layer to create openings to an underlying layer.

5. The method of claim 1, said depositing a metal layer comprises depositing an aluminum layer.

6. The method of claim 1, said depositing a metal layer comprises sputtering said metal layer.

7. The method of claim 1, comprising:

scrubbing said deposited metal layer.

8. The method of claim 1, comprising:

inspecting said deposited metal layer.

9. The method of claim 1, said patterning said second photoresist layer defining mirrors on said metal layer.

10. The method of claim 1, comprising:

depositing said first photoresist layer by spinning-on said photoresist layer.

11. The method of claim 1, comprising:

depositing a photoresist coating over said second photoresist layer.

12. The method of claim 11, comprising:

dicing said wafer.

13. A method of patterning a metal layer, the method comprising:

depositing a metal layer on a wafer of partially formed devices;

depositing a photoresist layer over said metal layer;

patterning said photoresist layer to expose regions of said metal layer;

etching said metal layer to remove said exposed regions of said metal layer; and

cleaning residue created by said etching using a photoresist developer, said patterned photoresist layer remaining after said cleaning.

14. The method of claim 13, said depositing a metal layer comprises depositing an aluminum layer.

15. The method of claim 13, said depositing a metal layer comprises sputtering said metal layer.

16. The method of claim 13, comprising:

scrubbing said deposited metal layer.

17. The method of claim 13, comprising:

inspecting said deposited metal layer.

18. The method of claim 13, comprising:

depositing said photoresist layer by spinning-on said photoresist layer.

19. The method of claim 13, comprising:

patterning said photoresist layer to create openings to said metal layer.

20. The method of claim 13, said patterning said photoresist layer defines mirrors on said metal layer.

21. The method of claim 13, said patterning said photoresist layer defines electrical interconnections on said metal layer.

22. The method of claim 13, comprising:

depositing a saw prep photoresist coating over said photoresist layer.

23. The method of claim 22, comprising:

dicing said wafer.

24. The method of claim 13, comprising:

heating said photoresist layer to reflow remaining portions of said photoresist layer.

25. The method of claim 24, comprising:

depositing another metal layer over said reflowed photoresist layer.

26. The method of claim 25, comprising:

patterning said another metal layer.

27. The method of claim 26, comprising:

removing said reflowed photoresist layer.

28. The method of claim 27, comprising:

depositing a saw prep photoresist coating over said patterned another metal layer.

29. The method of claim 28, comprising:

dicing said wafer.

30. The method of claim 13, comprising:

reflowing said photoresist layer.

31. The method of claim 30, comprising:

depositing another metal layer over said reflowed photoresist layer.

32. The method of claim 31, comprising:

patterning said another metal layer.

33. The method of claim 32, comprising:

removing said reflowed photoresist layer.

34. The method of claim 33, comprising:

depositing a saw prep photoresist coating over said photoresist layer.

35. The method of claim 34, comprising:

dicing said wafer.